Allicdata Part #: | 497-4085-5-ND |
Manufacturer Part#: |
BUF420AW |
Price: | $ 7.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | TRANS NPN 450V 30A TO247 |
More Detail: | Bipolar (BJT) Transistor NPN 450V 30A 200W Throug... |
DataSheet: | BUF420AW Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 6.54570 |
30 +: | $ 5.63850 |
120 +: | $ 4.89594 |
510 +: | $ 4.26330 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 30A |
Voltage - Collector Emitter Breakdown (Max): | 450V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 4A, 20A |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | -- |
Power - Max: | 200W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247-3 |
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The BUF420AW is a versatile and popular transistor known for its broad range of uses. It is a general-purpose bipolar junction transistor (BJT) with an amplification factor (beta) of 1000 (or less). This device is a singlePNP type transistor, meaning it has two active layers and no substrate layer. It is well-suited for both digital and analog circuits and is commonly used in amplifier, power converter and voltage regulator applications.
The BUF420AW is fabricated using a proprietary process that utilizes advanced fabrication techniques. These techniques include both horizontal and vertical process steps to ensure accuracy and reliability. The device is tested and certified to ensure quality and performance.
The BUF420AW has a maximum operating temperature of -65°C to +150°C. This wide range makes it suitable for a variety of applications in both cold and hot environments. Its low power consumption is also beneficial for applications that require battery operation or long-term operation.
The BUF420AW also has a range of features that make it suitable for a number of applications. Its common base configuration has higher input impedances, making it ideal for AC input stage applications. It has a large, uniform current gain across the temperature range and can withstand up to 25V, allowing it to be used in a broad range of voltage levels. It also has a good thermal resistance, meaning it is capable of handling large power dissipation.
The working principle of the BJT is based on the basic principle that when a current flows through it, the current gain will be determined by the device\'s load line resistance and base-emitter voltage. As the current is increased, the voltage drop across the device will be increased, reducing the voltage across the load, thus increasing the current gain. This increased current gain is the main characteristic of a BJT.
The BUF420AW transistor is well-suited for a variety of applications, such as general-purpose amplifiers, audio and RF amplifiers, pulse amplifiers, power converters, voltage regulators, and switching/vibration control devices. Its range and features make it an excellent choice for electronic circuitry of any type.
The specific data is subject to PDF, and the above content is for reference
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