Allicdata Part #: | BUH50-ND |
Manufacturer Part#: |
BUH50 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 500V 4A TO-220AB |
More Detail: | Bipolar (BJT) Transistor NPN 500V 4A 4MHz 50W Thro... |
DataSheet: | BUH50 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | SWITCHMODE™ |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 4A |
Voltage - Collector Emitter Breakdown (Max): | 500V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 1A, 3A |
Current - Collector Cutoff (Max): | 100µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 5 @ 2A, 5V |
Power - Max: | 50W |
Frequency - Transition: | 4MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
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A BUH50 is a short form for the Bipolar Junction Transistor (BJT) with a single high voltage collector-emitter rating of up to 50 volts, which is designed to provide reliable power switching performance. The transistor is especially suitable for the development and application of switching power supplies, motor drivers and gate drivers, as well as other higher voltage and current applications. The package in which the transistor is housed has an insulation class of E-line at a voltage rating of 500V. This device is well suited for use in high-voltage and high-current applications, providing a reliable and cost-effective solution for many different applications.
The BUH50 BJT is a type of bipolar junction transistor. It consists of three terminals, the collector (C), the base (B) and the emitter (E). The current flowing through the collector is controlled by the voltage developed across the base-emitter junction, known as the emitter-base voltage. This voltage is quite small, usually in the order of a few hundred millivolts, so a relatively low supply voltage is usually sufficient. The collector current is then determined by the voltage applied to the base and increases as the base-emitter voltage is increased.
The collector current of a BJT is normally limited by either the junction\'s reverse breakdown voltage or the stored charge in the junction. With a BUH50 bipolar junction transistor, the stored charge allows for higher collector current and better switching performance than a unipolar transistor. This makes the BUH50 a perfect choice for applications requiring high voltage and current, such as motor drivers and gate drivers. The BUH50 also has advantages over other voltage-controlled switching devices such as MOSFETs, due to the low on-state resistance that the BJT offers.
The BUH50 can be used in a variety of applications, such as power supplies, motor drivers and gate drivers. It can also be used in switching power converters as a primary switcher device, or in RF switching as an RF switch driver. The device is suitable for high capacitor filter topology since the switching characteristics are better with a BJT than with a MOSFET. Due to its high voltage rating, the BUH50 can also be used as a voltage regulator, or as a base drive circuit in a switching power converter.
In general, the BUH50 is an ideal solution for applications requiring high voltage and current switching. The device is not only reliable and cost-effective, but also offers excellent switching performance. The device is also easily incorporated in a variety of circuits due to its small package size and its wide range of leads options. With its high voltage rating and easy to use features, the BUH50 can be the perfect switch for your next design project.
The specific data is subject to PDF, and the above content is for reference
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