BUH51

The BUH51 is a high voltage, NPN, planar passivated and avalanche-immune bipolar power transistor. It is mainly used in applications that require high voltage and high current, such as high power converters and industrial power supplies. This article will discuss the application field and working principle of the BUH51.

Application Field

The BUH51 is an extremely versatile power transistor. It can be used in various types of high voltage and high current applications, such as:

• High power converters
• Power supplies
• High voltage amplifiers
• Motor control
• Power switching circuits
• DC-DC converters

The BUH51 is widely used in the industrial and medical sectors. It is also used in DC to AC inverters and power factor correction circuits. It can be used in both switching and linear applications.

Working Principle

The BUH51 is an NPN type power transistor, which means that it is a three-terminal device with an emitter region, a base region and a collector region. The emitter is negatively charged with respect to the base, while the collector is positively charged with respect to the base.When a voltage is applied to the base of the BUH51, the transistor will conduct current through the collector and the emitter. This current is controlled by the rate of change of base current (called the Beta or hFe). The higher the Beta, the faster the current will flow through the transistor.In order to maintain the transistor in its “on” state, a voltage must be applied to the base at all times. This voltage must be sufficient to overcome the reverse base-emitter voltage, otherwise the current will not flow through the transistor.The BUH51 is also designed to be avalanche-immune, which means it can handle high voltage surges without latching or damaging the transistor. This protection is provided by a fast-recovery avalanche guard diode connected to the collector.

Conclusion

The BUH51 is a high voltage and high current NPN power transistor. It is used in a wide variety of applications, such as high power converters, supply rails, motor control, and DC to AC inverters. The working principle of the BUH51 is based on the rate of change of base current controlled by the Beta, and a voltage must be applied to the base to maintain the transistor in its “on” state. The BUH51 is also designed with avalanche immunity protection.

BUH50	ON Semicondu...	0.0 $	1000	TRANS NPN 500V 4A TO-220A...
BUH50G	ON Semicondu...	0.0 $	1000	TRANS NPN 500V 4A TO-220A...
BUH51	ON Semicondu...	0.0 $	1000	TRANS NPN 500V 3A TO-225B...
BUH51G	ON Semicondu...	--	1000	TRANS NPN 500V 3A TO-225B...