Transistors - Bipolar (BJT) - Single
BUJ103AX,127 application field and working principle
Introduction

BUJ103A is a NPN Silicon Planar Epitaxial Transistor for switching and amplifier applications, produced using the high cell density epitaxial planar process. BUJ103A can be used in applications such as switching, amplifier and driver circuits in industrial and consumer electronics, instrumentation and telecoms amongst others. The high gain and low saturation voltage makes this transistor suitable for a wide range of digital and analog applications including low power amplifiers, equivalent circuits, converter circuits, driver circuits and low frequency oscillators.

Application Field

The BUJ103AX,127 can be used in small signal, high-speed switching and amplifier applications. It is suitable for a wide range of digital and analog applications including low power amplifiers, equivalent circuits, converter circuits, driver circuits and low frequency oscillators. Due to its high gain, low saturation voltage and low current noise, it can be used in precision circuits, high-speed line receivers, Comparators, etc. BUJ103AX,127 can also be used in line repeater and power buffer circuits.

Working Principle

The BUJ103AX,127 is a bipolar junction transistor (BJT). The BJT is made up of three regions: the base, collector, and emitter. The collector and emitter regions are the two terminals and are connected to one another through a base region, which acts as an amplifier. The working principle of BJT’s is based on the current flowing from collector to emitter when collector to base junction is reverse biased and emitter to base junction is forward biased. As the current from collector to base junction increases, the current from collector to emitter (Ic) increases as well. The size of the collector-to-emitter current is determined by the gain of the transistor, which is called the current gain (Beta).

The BUJ103AX,127 features high gain and low saturation voltage and require very low base current for proper operation. The maximum current rating of the transistor is 200V, allowing for higher voltage applications. The current gain is 200, allowing for higher speed of current switching applications. The maximum operating temperature for the BUJ103AX,127 is 150 degree Celsius, making it suitable for a wide range of applications.