BUL805

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	5A
Voltage - Collector Emitter Breakdown (Max):	450V
Vce Saturation (Max) @ Ib, Ic:	800mV @ 600mA, 3A
Current - Collector Cutoff (Max):	250µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	10 @ 2A, 5V
Power - Max:	80W
Frequency - Transition:	--
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB

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Introduction

BUL805 is a silicon NPN pnp transistor commonly used in electronic circuits. It is a part of the bipolar family of transistors, meaning it has both an emitter and a collector as opposed to unipolar transistors that are only able to conduct in one direction. It is also considered a single transistor, meaning it has only one stage of amplification. The features of the BUL805 make it suitable for a variety of applications in areas such as amplifiers, power supplies, and power amplifiers.

Application Field

BUL805 is commonly used in applications such as audio amplifiers, power supplies, and power amplifiers. The high switching speed and low collector-emitter saturation voltage of the BUL805 make it ideal for use in these applications. The device also offers a relatively high gain, high current capability and low noise performance. In audio amplifiers, the BUL805 is suitable for use in low level amplifier stages such as pre-amplifier and headphone pre-amplifier circuits. The low noise performance of the BUL805 makes it ideal for these applications. The BUL805 also has a wide range of applications in power supplies. The BUL805 is well-suited for use in buck, boost and inverting mode converters. It is also suitable for use in low-power Class-D power amplifiers, as its high gain, low noise performance and fast switching speed make it an excellent choice for this application. Finally, the BUL805 is an ideal component for use in power amplifiers in a variety of applications. Its wide applicability range and robust character make it an ideal choice for use in power amplifiers operating in Class-AB, Class-A, Class-B, and Class-C amplifier circuits.

Working Principle

The BUL805 is a bipolar junction transistor (BJT) that is made up of three layers of semiconductor material, namely the emitter, base and collector. An electric current flows through the device when electrons are injected from the n-type base into the p-type collector and then move through the bipolar junction of the transistor. This causes a current, or amplification, to flow between the collector and the emitter, resulting in a voltage gain. The importance of the base-emitter junction is that it acts as a switch, enabling the transistor to be turned “on” or “off”. When the base-emitter junction is forward-biased or “on,” the current gain, or amplification is increased, resulting in a higher voltage gain across the collector and emitter. When the base-emitter junction is reversed-biased or “off,” the current gain is decreased and the voltage gain across the collector and emitter is reduced. The switching action of the BUL805 is controlled by the DC current that flows through the base layer, which is in turn controlled by the voltage applied to the base. The BUL805 is also highly efficient, with a power dissipation (PD) of up to 1 Watt. This high PD makes the BUL805 an ideal choice for applications where high currents must be switched rapidly. Due to its high efficiency and fast switching speeds, the BUL805 is popular for use in high-power audio amplifiers and power supplies.

Conclusion

The BUL805 is a highly versatile transistor with a wide range of applications in areas such audio amplifiers, power supplies, and power amplifiers. Its features include a high gain, fast switching speed, and low noise performance, making it ideal for use in these applications. Its bipolar junction transistor design and high power dissipation also make it an ideal choice for high power audio amplifiers and power supplies.

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