BUL810

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The BUL810 single bipolar transistor is designed as an enhancement mode PNP power transistor. The device is a high speed, low cost, rugged, and easily available vertical conductivity modulation (VCM) transistor utilized in low voltage, high current applications. It can be used in a variety of contexts ranging from switch mode power supplies to high voltage dc-dc converters to linear regulators. This datasheet will cover the fundamentals of the BUL810 and its application field, as well as its working principle.

Overview of the BUL810

The BUL810 is designed utilizing state of the art semiconductor fabrication processes. It is housed in a TO220-3L package, featuring a collector emitter voltage (Vce) of 60V, a collector current (Ic) of 10A, and a operating temperature range between -55 and +150 degrees Celsius. It possesses a high gain of 10, and has a Darlington pair integrated in the same package along with a collector current of up to 10A. The device also features a high current output capacity and good thermal stability. Aside from these features, the BUL810 also includes a low power consumption, an oversized guard ring for common mode rejection, and high immunity against electro-magnetic interfere (EMI).

Application Field

The BUL810 was designed for use in a wide range of power electronics applications. Some of the possible applications for this device include low voltage power switching, PWM controllers, DC-DC converters, switch mode power supplies, and linear voltage regulators. Due to its excellent performance characteristics, it is often used in the automotive and transportation industry. It can be used in systems such as the fuel injection, EMS control, electronic brake system (EBS), HVAC, traction control, and driver assistance systems. Aside from these applications, it is also ideal for industrial power converters, smart grid measurement and control, RF power amplifiers, and solar inverters.

Working Principle

The structural basis of the BUL810 is an N-channel FET. When the gate terminal is applied with a positive voltage, the FET channel width is widened and the drain-source channel resistance decreases. This increases the transistor current (Ic). On the other hand, if a negative voltage is applied to the gate, the FET channel width is reduced and the drain-source channel resistance increases, thus reducing Ic. This response is often known as the enhancement mode of operation.

In a PNP bipolar transistor, the emitter is positive and the base is negative while the collector is zero potential. Under bias conditions, a small current flows from the emitter to the base. The current flowing through the base terminates at the collector and then stores energy. This enables the transistor to act as a current source, allowing it to control the overall power output of the device.

The BUL810 is well-suited for use in switch-mode power supplies and for power converters. It can be utilized for built in switching, pulsing, and modulation. With a high current output capability, the device allows for a higher efficiency power conversion. This enables the device to control the current output of a wide range of power circuits, from high voltage dc-dc converters to low voltage switch mode power supplies.

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