BULD118D-1

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The BU508D-1 (also known as BU508AF or BU508AFD) is a single-ended N-channel vertical Diffused Power MOSFET transistor. By targeting a variety of switching, low power, and linear applications, it corresponds to the industry standard TO-220 package. This transistor can also be used to control the current in a variety of power management applications.

The BU508D-1 is designed to offer superior performance over a wide range of operating conditions. It is manufactured with featured technologies that ensure low on-state resistance, high input impedance, and excellent current protection performance. This transistor can be used for a variety of applications, such as the power supply of hard disk drive spindle motors and laser diode units, in dc-dc converters, on-card transistors, and current sensors and valves.

The BU508D-1 offers a variety of features to ensure optimal performance and reliability. The device\'s low avalanche characteristics guarantee a safe design that minimizes current loss. The device also has mounted leads designed to provide secure connections between the transistor and the printed circuit board. The temperature range for operating and storing of the device is - 25 to 125°C for the ambient temperature range.

The BU508D-1 offers a high degree of power efficiency, capable of handling continuous load currents up to 12A. It can handle peak currents up to 150A, and its thermal resistance enables it to be used with direct heat sinking and without cooling. This device also has a high surge capability, and its maximum voltage (VDS) is 20V, with a minimum gate voltage of 4.5V.

In terms of its working principle, the BU508D-1 consists of an n-channel vertical diffused power MOSFET. It works by using a control voltage (Vgs) between the gate and the source, controlling or modulating the flow of current between the drain and the source. As a result, the voltage applied to the gate controls the resistance between the drain and the source, allowing for efficient current control, resulting in more efficient power management. In other words, the BU508D-1 works by completing a complete three-terminal circuit, providing the necessary voltage for current control.

The BU508D-1 is ideal for a variety of applications as mentioned before, its combination of low on-state resistance and high input impedance make it an ideal choice for a variety of low power and linear applications. Additionally, its ability to handle peak currents of up to 150A (for a maximum of 15 seconds) make it well suited for motor drivers, current sensors, and valves. In terms of reliability, the BU508D-1 offers a high degree of power efficiency and its temperature range enables it to be used in even the toughest environment.

In conclusion, the BU508D-1 offers a versatile and reliable single-ended N-channel vertical Diffused Power MOSFET transistor. It is designed to offer superior performance over a wide range of operating conditions, and it offers a variety of features such as low avalanche characteristics, mounted leads designed for secure connections, and high surge capability. This device is ideal for applications that require efficient current control, including the power supplies of hard disk drives and laser diode units, dc-dc converters, current sensors and valves, and more.

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