BULD742CT4 Allicdata Electronics
Allicdata Part #:

497-7736-2-ND

Manufacturer Part#:

BULD742CT4

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: TRANS NPN 400V 4A DPAK
More Detail: Bipolar (BJT) Transistor NPN 400V 4A 45W Surface ...
DataSheet: BULD742CT4 datasheetBULD742CT4 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 3.5A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 800mA, 3V
Power - Max: 45W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Base Part Number: BULD742
Description

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The BULD742CT4 is a type of single bipolar junction transistor (BJT), a semiconductor device commonly used in integrated circuits. It is a three-terminal device, with a base, a collector, and an emitter. It has two layers of semiconductor material, between which a charge carrier, or “hole”, can be injected. A BJT is an effective switch, as it can be used to control current flow in an electronic circuit. The BULD742CT4 is ideal for a variety of electronic applications due to its versatility: it can be employed as an amplifier, an oscillator, a rectifier, and even a voltage regulator.

The BULD742CT4 is divided into two regions, referred to as the P-type (positive) and the N-type (negative) regions. It is important to note that the P-type region of the BULD742CT4 consists of material that has been “doped”. This means that the material has had impurities introduced into its structure, which create regions of opposite charge. Doping allows for the movement of electrons from the N-type to the P-type region of the transistor, creating what is known as a “collector-base” junction.

The working principle of the BULD742CT4 is based on the transistor’s internal structure. The Collector region of the transistor is connected to the emitter region by P-type and N-type materials, allowing electrons to flow from the collector to the emitter through a junction between the two layers of material. The base region of the transistor serves as a control point—by varying the voltage of the base, the amount of current flowing between the collector and the emitter can be regulated.

Through its versatile working principle, the BULD742CT4 can be used in a variety of electronic applications, such as amplifiers, oscillators, rectifiers, voltage regulators, and more. It is an ideal choice for circuits that require low noise, low-power operation, such as audio preamps and power amplifiers. It can also be used in high frequency, high current applications, such as DC-DC converters, RF amplifiers, and switching regulators.

The BULD742CT4 is a small and compact device, making it a great choice for integrated circuits. Its versatile working principle and low power consumption make it a popular choice for a variety of electronic applications. In combination with other components, it can be used to regulate, amplify, or suppress electrical signals in a variety of ways. As such, it can be used for both analog and digital applications.

The specific data is subject to PDF, and the above content is for reference

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