BY251P-E3/54 Allicdata Electronics
Allicdata Part #:

BY251P-E3/54GITR-ND

Manufacturer Part#:

BY251P-E3/54

Price: $ 0.13
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 200V 3A DO201AD
More Detail: Diode Standard 200V 3A Through Hole DO-201AD
DataSheet: BY251P-E3/54 datasheetBY251P-E3/54 Datasheet/PDF
Quantity: 1000
1400 +: $ 0.11527
2800 +: $ 0.10670
7000 +: $ 0.10099
9800 +: $ 0.09528
35000 +: $ 0.08862
Stock 1000Can Ship Immediately
$ 0.13
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: BY251
Description

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BY251P-E3/54 has become increasingly popular in recent years due to its low profile design and excellent performance characteristics. This diode is usually formed with epitaxial PN junction and is ideally suited for use in high-speed switching applications. It offers excellent thermal characteristics, low forward voltage drop and high current handling (1.3 amperes).

The BY251P-E3/54 is a single rectifier diode, generally referred to as a Schottky rectifier. It is designed to rectify the alternating current of high frequency, and it is usually used to replace the more traditional diode rectifier. This diode is ideal for applications such as voltage conversion, power conditioning and DC power supplies. It is also commonly used in switching circuits or for noise suppression.

The working principle of BY251P-E3/54 is based on the quantum mechanical property of tunneling. This diode has very low forward voltage drop and high efficiency, which is due to the application of the tunneling effect of electrons when passing through a barrier. The electrons are forced to pass through a tunnel barrier, which is made of a narrow region between two materials with different electrical characteristics. The electrons then flow through the narrow region, resulting in a much lower forward voltage drop.

The BY251P-E3/54 is an efficient rectifier diode, and its forward voltage drop is typically less than 0.2V. It is constructed with an intricately designed tunneling structure, which provides superior electron conduction through a material barrier. With a minimal amount of current produced, the diode is able to provide a virtually constant forward voltage drop. This allows the device to be used in high frequency applications where a low forward voltage drop is required.

The BY251P-E3/54 is also very suitable for use in high-speed switching circuits, as it does not suffer from reverse recovery characteristics. This feature makes it ideal for high-speed switching applications where reduced switching losses and improved operation speeds are required. The BY251P-E3/54 also has a low input capacitance, which allows for improved operation speed as well as higher current handling.

In summary, the BY251P-E3/54 is a single rectifier diode, typically referred to as a Schottky rectifier. It is an ideal diode for applications such as voltage conversion, power conditioning, DC power supplies and high-speed switching circuits. It is a low-profile device with excellent thermal characteristics, low forward voltage drop and high current handling. Additionally, the BY251P-E3/54 is uniquely designed with a tunneling structure which provides superior electron conduction and low input capacitance. It is also characterized by excellent reverse recovery characteristics, making it a reliable choice for high-speed applications.

The specific data is subject to PDF, and the above content is for reference

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