Allicdata Part #: | BY251P-E3/54GITR-ND |
Manufacturer Part#: |
BY251P-E3/54 |
Price: | $ 0.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 200V 3A DO201AD |
More Detail: | Diode Standard 200V 3A Through Hole DO-201AD |
DataSheet: | BY251P-E3/54 Datasheet/PDF |
Quantity: | 1000 |
1400 +: | $ 0.11527 |
2800 +: | $ 0.10670 |
7000 +: | $ 0.10099 |
9800 +: | $ 0.09528 |
35000 +: | $ 0.08862 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 3A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 3µs |
Current - Reverse Leakage @ Vr: | 5µA @ 200V |
Capacitance @ Vr, F: | 40pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-201AD, Axial |
Supplier Device Package: | DO-201AD |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | BY251 |
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BY251P-E3/54 has become increasingly popular in recent years due to its low profile design and excellent performance characteristics. This diode is usually formed with epitaxial PN junction and is ideally suited for use in high-speed switching applications. It offers excellent thermal characteristics, low forward voltage drop and high current handling (1.3 amperes).
The BY251P-E3/54 is a single rectifier diode, generally referred to as a Schottky rectifier. It is designed to rectify the alternating current of high frequency, and it is usually used to replace the more traditional diode rectifier. This diode is ideal for applications such as voltage conversion, power conditioning and DC power supplies. It is also commonly used in switching circuits or for noise suppression.
The working principle of BY251P-E3/54 is based on the quantum mechanical property of tunneling. This diode has very low forward voltage drop and high efficiency, which is due to the application of the tunneling effect of electrons when passing through a barrier. The electrons are forced to pass through a tunnel barrier, which is made of a narrow region between two materials with different electrical characteristics. The electrons then flow through the narrow region, resulting in a much lower forward voltage drop.
The BY251P-E3/54 is an efficient rectifier diode, and its forward voltage drop is typically less than 0.2V. It is constructed with an intricately designed tunneling structure, which provides superior electron conduction through a material barrier. With a minimal amount of current produced, the diode is able to provide a virtually constant forward voltage drop. This allows the device to be used in high frequency applications where a low forward voltage drop is required.
The BY251P-E3/54 is also very suitable for use in high-speed switching circuits, as it does not suffer from reverse recovery characteristics. This feature makes it ideal for high-speed switching applications where reduced switching losses and improved operation speeds are required. The BY251P-E3/54 also has a low input capacitance, which allows for improved operation speed as well as higher current handling.
In summary, the BY251P-E3/54 is a single rectifier diode, typically referred to as a Schottky rectifier. It is an ideal diode for applications such as voltage conversion, power conditioning, DC power supplies and high-speed switching circuits. It is a low-profile device with excellent thermal characteristics, low forward voltage drop and high current handling. Additionally, the BY251P-E3/54 is uniquely designed with a tunneling structure which provides superior electron conduction and low input capacitance. It is also characterized by excellent reverse recovery characteristics, making it a reliable choice for high-speed applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BY255P-E3/54 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1.3KV 3A D... |
BY255P-E3/73 | Vishay Semic... | 0.11 $ | 3000 | DIODE GEN PURP 1.3KV 3A D... |
BY251GP-E3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
BY251GPHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
BY255GPHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1.3KV 3A D... |
BY251GP-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
BY251GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
BY252GP-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
BY252GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
BY253GP-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
BY253GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
BY254GP-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
BY254GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
BY255GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1.3KV 3A D... |
BY253P-E3/73 | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
BY254P-E3/73 | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
BY251P-E3/54 | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
BY252P-E3/54 | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
BY253P-E3/54 | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
BY254P-E3/54 | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
BY251P-E3/73 | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
BY255GP-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1.3KV 3A D... |
BY255GP-E3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1.3KV 3A D... |
BY252GP-E3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURPOSE DO201AD... |
BY253GP-E3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURPOSE DO201AD... |
BY254GP-E3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURPOSE DO201AD... |
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