Allicdata Part #: | BY251P-E3/73-ND |
Manufacturer Part#: |
BY251P-E3/73 |
Price: | $ 0.10 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 200V 3A DO201AD |
More Detail: | Diode Standard 200V 3A Through Hole DO-201AD |
DataSheet: | BY251P-E3/73 Datasheet/PDF |
Quantity: | 1000 |
9000 +: | $ 0.09095 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 3A |
Speed: | Small Signal = |
Reverse Recovery Time (trr): | 3µs |
Current - Reverse Leakage @ Vr: | 5µA @ 200V |
Capacitance @ Vr, F: | 40pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-201AD, Axial |
Supplier Device Package: | DO-201AD |
Operating Temperature - Junction: | -55°C ~ 150°C |
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BY251P-E3/73 is a single rectifier diode, commonly used in power supplies, including offline AC-DC and DC-DC power supplies. It is ideal for these applications as it has a low forward voltage drop and high speed switching. It is suitable for both single-phase and three-phase applications.
Applications
The BY251P-E3/73 is suitable for various power supplies. It can be used in AC to DC rectifiers and can improve efficiency in line filters and small home appliances. It can also be used in DC-DC converters, inverters and driver circuits. With its fast switching time, it is well suited for use in applications that require high speed operation, such as LED lighting, computer motherboards and other high-speed circuits.
In automotive applications, it is used for circuit protection, power switching, and current limiting. The BY251P-E3/73 diode is also suitable for automotive power systems such as brake systems, car audio systems, and power steering.
Working Principle
The BY251P-E3/73 diode is a single rectifier diode which consists of two layers of semiconductor material, P-type and N-type. P-type semiconductor material has an excess of holes, while N-type semiconductor material has an excess of electrons. When a voltage is applied to the two layers, the polarity of the voltage determines the direction of the current flow. If the voltage is positive, it will flow through the P-layer to the N-layer. If the voltage is negative, it will flow through the N-layer to the P-layer. This is known as forward bias. When the voltage is reversed, then the current flow will also reverse and is known as reverse bias.
When in forward bias, the BY251P-E3/73 conducts current because the P-type and N-type layers create a very low resistance path for the current flow. When in reverse bias, the diode does not conduct current because the P-type and N-type layers create a very high resistance path for the current flow. This essentially prevents any current flow in the opposite direction when in reverse bias. Therefore, the BY251P-E3/73 diode essentially behaves like a one-way valve, allowing current to flow in one direction but not the other.
The BY251P-E3/73 has a low forward voltage drop (VF) of approximately 0.3 V, which helps reduce losses in power supplies. This is because the voltage drop is the difference between the supply voltage and the diode’s output voltage. A lower voltage drop means less energy is lost due to the diode, which results in more efficient power supplies. The BY251P-E3/73 also has a fast switching time which is an important factor for use in high-speed circuits.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BY255P-E3/54 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1.3KV 3A D... |
BY255P-E3/73 | Vishay Semic... | 0.11 $ | 3000 | DIODE GEN PURP 1.3KV 3A D... |
BY251GP-E3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
BY251GPHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
BY255GPHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1.3KV 3A D... |
BY251GP-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
BY251GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
BY252GP-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
BY252GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
BY253GP-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
BY253GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
BY254GP-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
BY254GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
BY255GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1.3KV 3A D... |
BY253P-E3/73 | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
BY254P-E3/73 | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
BY251P-E3/54 | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
BY252P-E3/54 | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
BY253P-E3/54 | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
BY254P-E3/54 | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
BY251P-E3/73 | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
BY255GP-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1.3KV 3A D... |
BY255GP-E3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1.3KV 3A D... |
BY252GP-E3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURPOSE DO201AD... |
BY253GP-E3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURPOSE DO201AD... |
BY254GP-E3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURPOSE DO201AD... |
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