Allicdata Part #: | BYM10-800HE3/97-ND |
Manufacturer Part#: |
BYM10-800HE3/97 |
Price: | $ 0.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 800V 1A DO213AB |
More Detail: | Diode Standard 800V 1A Surface Mount DO-213AB |
DataSheet: | BYM10-800HE3/97 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.07903 |
Series: | SUPERECTIFIER® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 10µA @ 800V |
Capacitance @ Vr, F: | 8pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AB, MELF (Glass) |
Supplier Device Package: | DO-213AB |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | BYM10-800 |
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BYM10-800HE3/97 is a single rectifier diode manufactured by Beijing Ya Xun Electronics Co., Ltd. It is suitable for use in various environments and is often used in the telecommunication and transportation industries, as well as for sensing water and temperature. It is a versatile diode with a variety of operating characteristics and is characterized by high reliability and long service life.
The BYM10-800HE3/97 is a single rectifier diode that has a highly efficient reverse current breakdown capacity. It is typically operated in the forward conduction region and uses the bias of the diode junction to rectify and regulate the signal current. This diode is made up of a special p-n junction with a large area to ensure high rectification efficiency and a low series resistance. It is also designed with a low transient current peak to reduce the electrical shock that might be caused by the high currents of the pulse.
The BYM10-800HE3/97 has a wide range of application fields. It can be used in a variety of switching circuits, rectification circuits, data processing and efficiency circuits, power supply units and converters. In addition, due to its low capacitance and large area junction, it is also suitable for use in high frequency applications such as RF, IC, SAT and DC converters. Moreover, its general purpose performance, excellent such as soft start, waveform regulation and pulse adjustment make it suitable for telecommunication, computer and automotive applications.
The BYM10-800HE3/97 presents its outstanding performance because of its mechanical design and its rectifier characteristics. It is a robust diode with a compact construction, fast response and wide operating temperature range. It has a wide range of peak inverse voltage (PIV) and a low forward voltage drop. The BYM10-800HE3/97 is designed with a symmetrical structure to minimize the effect of temperature on the forward voltage drop.
The BYM10-800HE3/97 has an outstanding power handling capacity, which is due to the high voltage and high temperature dissipation of its components. Its operating characteristics are excellent and stable, and its maximum power dissipation is great. The diode is also characterized by its low capacitance and high stability. This means that it can maintain its rated values over a wide range of temperatures, currents and breakdown voltages.
The BYM10-800HE3/97 has a variety of uses and applications and is one of the most popular and efficient rectifier diodes in the world. It provides excellent performance, low power consumption, fast response, excellent reliability and long service life. With its versatile rectifier characteristics and a wide operating temperature range, this diode is a perfect choice for many applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BYM10-1000-E3/96 | Vishay Semic... | -- | 42000 | DIODE GEN PURP 1KV 1A DO2... |
BYM10-400-E3/96 | Vishay Semic... | -- | 16500 | DIODE GEN PURP 400V 1A DO... |
BYM12-200-E3/96 | Vishay Semic... | -- | 3000 | DIODE GEN PURP 200V 1A DO... |
BYM13-60-E3/96 | Vishay Semic... | -- | 10500 | DIODE SCHOTTKY 60V 1A DO2... |
BYM10-50-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
BYM10-200-E3/96 | Vishay Semic... | 0.08 $ | 4500 | DIODE GEN PURP 200V 1A DO... |
BYM10-100-E3/96 | Vishay Semic... | -- | 1500 | DIODE GEN PURP 100V 1A DO... |
BYM10-50-E3/96 | Vishay Semic... | -- | 4500 | DIODE GEN PURP 50V 1A DO2... |
BYM11-1000-E3/96 | Vishay Semic... | -- | 13500 | DIODE GEN PURP 1KV 1A DO2... |
BYM10-100-E3/97 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 100V 1A DO... |
BYM11-600-E3/97 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
BYM11-600-E3/96 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
BYM11-800-E3/96 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
BYM13-20-E3/97 | Vishay Semic... | 0.14 $ | 1000 | DIODE SCHOTTKY 20V 1A DO2... |
BYM13-20HE3/97 | Vishay Semic... | 0.14 $ | 1000 | DIODE SCHOTTKY 20V 1A DO2... |
BYM13-30-E3/97 | Vishay Semic... | 0.14 $ | 1000 | DIODE SCHOTTKY 30V 1A DO2... |
BYM13-30HE3/97 | Vishay Semic... | 0.14 $ | 1000 | DIODE SCHOTTKY 30V 1A DO2... |
BYM13-40-E3/97 | Vishay Semic... | 0.16 $ | 1000 | DIODE SCHOTTKY 40V 1A DO2... |
BYM13-40HE3/97 | Vishay Semic... | 0.14 $ | 1000 | DIODE SCHOTTKY 40V 1A DO2... |
BYM13-50-E3/97 | Vishay Semic... | 0.14 $ | 1000 | DIODE SCHOTTKY 50V 1A DO2... |
BYM13-50HE3/97 | Vishay Semic... | 0.14 $ | 1000 | DIODE SCHOTTKY 50V 1A DO2... |
BYM13-60-E3/97 | Vishay Semic... | 0.14 $ | 1000 | DIODE SCHOTTKY 60V 1A DO2... |
BYM13-60HE3/97 | Vishay Semic... | 0.14 $ | 1000 | DIODE SCHOTTKY 60V 1A DO2... |
BYM13-20HE3/96 | Vishay Semic... | 0.15 $ | 1000 | DIODE SCHOTTKY 20V 1A DO2... |
BYM13-30HE3/96 | Vishay Semic... | 0.15 $ | 1000 | DIODE SCHOTTKY 30V 1A DO2... |
BYM13-40HE3/96 | Vishay Semic... | 0.15 $ | 1000 | DIODE SCHOTTKY 40V 1A DO2... |
BYM13-50HE3/96 | Vishay Semic... | 0.15 $ | 1000 | DIODE SCHOTTKY 50V 1A DO2... |
BYM13-60HE3/96 | Vishay Semic... | 0.15 $ | 1000 | DIODE SCHOTTKY 60V 1A DO2... |
BYM13-40-E3/96 | Vishay Semic... | -- | 1000 | DIODE SCHOTTKY 40V 1A DO2... |
BYM13-30-E3/96 | Vishay Semic... | -- | 1000 | DIODE SCHOTTKY 30V 1A DO2... |
BYM13-20-E3/96 | Vishay Semic... | -- | 1000 | DIODE SCHOTTKY 20V 1A DO2... |
BYM11-1000HE3/97 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
BYM11-800HE3/97 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
BYM12-100HE3/97 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
BYM12-150HE3/97 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
BYM12-200HE3/97 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
BYM12-300HE3/97 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
BYM12-400HE3/97 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
BYM12-50HE3/97 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
BYM10-1000-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
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