Allicdata Part #: | BYM10-200HE3/96-ND |
Manufacturer Part#: |
BYM10-200HE3/96 |
Price: | $ 0.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 200V 1A DO213AB |
More Detail: | Diode Standard 200V 1A Surface Mount DO-213AB |
DataSheet: | BYM10-200HE3/96 Datasheet/PDF |
Quantity: | 1000 |
6000 +: | $ 0.08449 |
Series: | SUPERECTIFIER® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 10µA @ 200V |
Capacitance @ Vr, F: | 8pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AB, MELF (Glass) |
Supplier Device Package: | DO-213AB |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | BYM10-200 |
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Diodes are essential components when it comes to electronic circuits. In particular, rectifying diodes are used to convert alternating current (AC) input into direct current (DC) output. One such type of rectifying diode is the BYM10-200HE3/96. This diode is a high-speed rectifying diode, often chosen for its high-efficiency reverse voltage recovery and low level of forward voltage drop. This article will explain the application field, as well as the working principle, of the BYM10-200HE3/96.
The application field of the BYM10-200HE3/96 includes power rectifiers for telecommunications, mobile communications, and medical electronics. The diode\'s high-efficiency reverse voltage recovery and low level of forward voltage drop make it an ideal choice for applications that require rapid and efficient conversion of AC input into DC output. The diode is also able to handle large current spikes without breaking down, making it an excellent choice for high-demand applications. In addition, the BYM10-200HE3/96 is able to dissipate up to 200 volts of power, meaning it can handle a wide range of voltages.
Now that the application field of the BYM10-200HE3/96 has been discussed, let us take a closer look at its working principle. This diode operates on a principle known as reverse breakdown. In this process, when the applied voltage exceeds a certain threshold, known as the reverse breakdown voltage, current will begin to flow in the opposite direction of the normal diode current. This process is highly efficient and allows the diode to convert AC input into a stable DC output. When the forward voltage is applied to the diode, current flows in the forward direction and the reverse breakdown process is prevented due to the blocking action of the diode\'s internal structure.
In addition to reverse breakdown, the BYM10-200HE3/96 also features several other key characteristics. These include a fast turn-on time, Miller plateau, impulse avalanche, and soft recovery characteristics. The fast turn-on time allows for rapid and efficient conversion of AC into DC, while the Miller plateau prevents current spikes caused by transient voltage shocks. The impulse avalanche and soft recovery characteristics also help to ensure that the diode operates at peak performance in high-demand applications. Finally, the BYM10-200HE3/96 has a high-temperature capability, allowing it to be used in applications that require long-term reliability.
In conclusion, the BYM10-200HE3/96 is an extremely versatile and efficient diode. Its application field includes power rectification for telecommunications, mobile communications, and medical electronics. Additionally, the diode operates on a principle known as reverse breakdown, allowing for the rapid and efficient conversion of AC input into DC output. Finally, the diode has several key characteristics, such as fast turn-on time, Miller plateau, impulse avalanche, and soft recovery characteristics, which help to ensure its peak performance in high-demand applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BYM10-1000-E3/96 | Vishay Semic... | -- | 42000 | DIODE GEN PURP 1KV 1A DO2... |
BYM10-400-E3/96 | Vishay Semic... | -- | 16500 | DIODE GEN PURP 400V 1A DO... |
BYM12-200-E3/96 | Vishay Semic... | -- | 3000 | DIODE GEN PURP 200V 1A DO... |
BYM13-60-E3/96 | Vishay Semic... | -- | 10500 | DIODE SCHOTTKY 60V 1A DO2... |
BYM10-50-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
BYM10-200-E3/96 | Vishay Semic... | 0.08 $ | 4500 | DIODE GEN PURP 200V 1A DO... |
BYM10-100-E3/96 | Vishay Semic... | -- | 1500 | DIODE GEN PURP 100V 1A DO... |
BYM10-50-E3/96 | Vishay Semic... | -- | 4500 | DIODE GEN PURP 50V 1A DO2... |
BYM11-1000-E3/96 | Vishay Semic... | -- | 13500 | DIODE GEN PURP 1KV 1A DO2... |
BYM10-100-E3/97 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 100V 1A DO... |
BYM11-600-E3/97 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
BYM11-600-E3/96 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
BYM11-800-E3/96 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
BYM13-20-E3/97 | Vishay Semic... | 0.14 $ | 1000 | DIODE SCHOTTKY 20V 1A DO2... |
BYM13-20HE3/97 | Vishay Semic... | 0.14 $ | 1000 | DIODE SCHOTTKY 20V 1A DO2... |
BYM13-30-E3/97 | Vishay Semic... | 0.14 $ | 1000 | DIODE SCHOTTKY 30V 1A DO2... |
BYM13-30HE3/97 | Vishay Semic... | 0.14 $ | 1000 | DIODE SCHOTTKY 30V 1A DO2... |
BYM13-40-E3/97 | Vishay Semic... | 0.16 $ | 1000 | DIODE SCHOTTKY 40V 1A DO2... |
BYM13-40HE3/97 | Vishay Semic... | 0.14 $ | 1000 | DIODE SCHOTTKY 40V 1A DO2... |
BYM13-50-E3/97 | Vishay Semic... | 0.14 $ | 1000 | DIODE SCHOTTKY 50V 1A DO2... |
BYM13-50HE3/97 | Vishay Semic... | 0.14 $ | 1000 | DIODE SCHOTTKY 50V 1A DO2... |
BYM13-60-E3/97 | Vishay Semic... | 0.14 $ | 1000 | DIODE SCHOTTKY 60V 1A DO2... |
BYM13-60HE3/97 | Vishay Semic... | 0.14 $ | 1000 | DIODE SCHOTTKY 60V 1A DO2... |
BYM13-20HE3/96 | Vishay Semic... | 0.15 $ | 1000 | DIODE SCHOTTKY 20V 1A DO2... |
BYM13-30HE3/96 | Vishay Semic... | 0.15 $ | 1000 | DIODE SCHOTTKY 30V 1A DO2... |
BYM13-40HE3/96 | Vishay Semic... | 0.15 $ | 1000 | DIODE SCHOTTKY 40V 1A DO2... |
BYM13-50HE3/96 | Vishay Semic... | 0.15 $ | 1000 | DIODE SCHOTTKY 50V 1A DO2... |
BYM13-60HE3/96 | Vishay Semic... | 0.15 $ | 1000 | DIODE SCHOTTKY 60V 1A DO2... |
BYM13-40-E3/96 | Vishay Semic... | -- | 1000 | DIODE SCHOTTKY 40V 1A DO2... |
BYM13-30-E3/96 | Vishay Semic... | -- | 1000 | DIODE SCHOTTKY 30V 1A DO2... |
BYM13-20-E3/96 | Vishay Semic... | -- | 1000 | DIODE SCHOTTKY 20V 1A DO2... |
BYM11-1000HE3/97 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
BYM11-800HE3/97 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
BYM12-100HE3/97 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
BYM12-150HE3/97 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
BYM12-200HE3/97 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
BYM12-300HE3/97 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
BYM12-400HE3/97 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
BYM12-50HE3/97 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
BYM10-1000-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
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