Allicdata Part #: | BYM11-100HE3/97-ND |
Manufacturer Part#: |
BYM11-100HE3/97 |
Price: | $ 0.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 100V 1A DO213AB |
More Detail: | Diode Standard 100V 1A Surface Mount DO-213AB |
DataSheet: | BYM11-100HE3/97 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.08086 |
Series: | SUPERECTIFIER® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 150ns |
Current - Reverse Leakage @ Vr: | 5µA @ 100V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AB, MELF (Glass) |
Supplier Device Package: | DO-213AB |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | BYM11-100 |
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BYM11-100HE3/97 Application Field and Working Principle
BYM11-100HE3/97 is a rectifier diode considered as a single part for power electronics applications. It is widely used for rectification of alternating current signals with a high voltage up to 1000V.
The diode is characterized by its high efficiency by using a high-performance electric hardware configuration. The package includes a general-purpose anode and a 150A anode capacitance used for the rectifiers. The physical size of the device is 9.1*9.6mm and the maximum operating temperature is 125°C. This is suitable applications operating in a high-temperature environment.
Working Principle of BYM11-100HE3/97
The diode works by converting the input alternating current signals into direct current. This is done by allowing the electrons to flow in one direction through the diode. The diode has two electrodes called an anode and a cathode which are connected to the external circuit.
When the anode is connected to a positive voltage and the cathode is connected to a negative voltage, then a forward bias occurs. The electrons move from the electron-rich cathode of the diode towards the anode, across the diode\'s electric potential barrier. This positive voltage then causes the electrons to be pushed across the barrier and makes them available for electric conduction.
On the other hand, when the anode is connected to the negative voltage and the cathode is connected to the positive voltage, then a reverse bias occurs. The electrons move from the anode towards the cathode, but there is a barrier which prevents them from passing through. This barrier is called the anode capacitor, which acts as an insulator.
Once the direct current reaches the anode, it then flows through the external circuit, which is connected to the output of the diode. This will then produce the desired output voltage, depending on the input voltage. This power conversion is accomplished with a minimal amount of power dissipation.
Application of BYM11-100HE3/97
BYM11-100HE3/97 is used in a variety of applications including power supplies for industrial and electronic devices, household appliances, and electric vehicular systems. It is also used in automotive applications like DC/DC converters, electric starter relays, chargers, and inverters.
The device is also used in regulated and uncontrolled applications, including rectification of audio power and switch mode power conversion, inverters, and motor control applications. It can also be used to control current levels in capacitor energy storage systems such as solar and wind energy systems.
The diode is designed to be highly reliable and durable, which makes it an ideal choice for long-term use. It can also handle high power applications with minimal power loss and minimal heat build-up.
Conclusion
BYM11-100HE3/97 is a reliable and efficient rectifier diode which is used for power supplies in a wide range of applications. The working principle involves converting the input alternating current signals into direct current, with minimal power loss and minimal heat build-up. The device is highly reliable and capable of handling high power applications with minimal power loss.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BYM10-1000-E3/96 | Vishay Semic... | -- | 42000 | DIODE GEN PURP 1KV 1A DO2... |
BYM10-400-E3/96 | Vishay Semic... | -- | 16500 | DIODE GEN PURP 400V 1A DO... |
BYM12-200-E3/96 | Vishay Semic... | -- | 3000 | DIODE GEN PURP 200V 1A DO... |
BYM13-60-E3/96 | Vishay Semic... | -- | 10500 | DIODE SCHOTTKY 60V 1A DO2... |
BYM10-50-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
BYM10-200-E3/96 | Vishay Semic... | 0.08 $ | 4500 | DIODE GEN PURP 200V 1A DO... |
BYM10-100-E3/96 | Vishay Semic... | -- | 1500 | DIODE GEN PURP 100V 1A DO... |
BYM10-50-E3/96 | Vishay Semic... | -- | 4500 | DIODE GEN PURP 50V 1A DO2... |
BYM11-1000-E3/96 | Vishay Semic... | -- | 13500 | DIODE GEN PURP 1KV 1A DO2... |
BYM10-100-E3/97 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 100V 1A DO... |
BYM11-600-E3/97 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
BYM11-600-E3/96 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
BYM11-800-E3/96 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
BYM13-20-E3/97 | Vishay Semic... | 0.14 $ | 1000 | DIODE SCHOTTKY 20V 1A DO2... |
BYM13-20HE3/97 | Vishay Semic... | 0.14 $ | 1000 | DIODE SCHOTTKY 20V 1A DO2... |
BYM13-30-E3/97 | Vishay Semic... | 0.14 $ | 1000 | DIODE SCHOTTKY 30V 1A DO2... |
BYM13-30HE3/97 | Vishay Semic... | 0.14 $ | 1000 | DIODE SCHOTTKY 30V 1A DO2... |
BYM13-40-E3/97 | Vishay Semic... | 0.16 $ | 1000 | DIODE SCHOTTKY 40V 1A DO2... |
BYM13-40HE3/97 | Vishay Semic... | 0.14 $ | 1000 | DIODE SCHOTTKY 40V 1A DO2... |
BYM13-50-E3/97 | Vishay Semic... | 0.14 $ | 1000 | DIODE SCHOTTKY 50V 1A DO2... |
BYM13-50HE3/97 | Vishay Semic... | 0.14 $ | 1000 | DIODE SCHOTTKY 50V 1A DO2... |
BYM13-60-E3/97 | Vishay Semic... | 0.14 $ | 1000 | DIODE SCHOTTKY 60V 1A DO2... |
BYM13-60HE3/97 | Vishay Semic... | 0.14 $ | 1000 | DIODE SCHOTTKY 60V 1A DO2... |
BYM13-20HE3/96 | Vishay Semic... | 0.15 $ | 1000 | DIODE SCHOTTKY 20V 1A DO2... |
BYM13-30HE3/96 | Vishay Semic... | 0.15 $ | 1000 | DIODE SCHOTTKY 30V 1A DO2... |
BYM13-40HE3/96 | Vishay Semic... | 0.15 $ | 1000 | DIODE SCHOTTKY 40V 1A DO2... |
BYM13-50HE3/96 | Vishay Semic... | 0.15 $ | 1000 | DIODE SCHOTTKY 50V 1A DO2... |
BYM13-60HE3/96 | Vishay Semic... | 0.15 $ | 1000 | DIODE SCHOTTKY 60V 1A DO2... |
BYM13-40-E3/96 | Vishay Semic... | -- | 1000 | DIODE SCHOTTKY 40V 1A DO2... |
BYM13-30-E3/96 | Vishay Semic... | -- | 1000 | DIODE SCHOTTKY 30V 1A DO2... |
BYM13-20-E3/96 | Vishay Semic... | -- | 1000 | DIODE SCHOTTKY 20V 1A DO2... |
BYM11-1000HE3/97 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
BYM11-800HE3/97 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
BYM12-100HE3/97 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
BYM12-150HE3/97 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
BYM12-200HE3/97 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
BYM12-300HE3/97 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
BYM12-400HE3/97 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
BYM12-50HE3/97 | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
BYM10-1000-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
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