BYS459B-1500SE3/45

BYS459B-1500SE3/45 is a type of diode rectifier which is primarily used in power conversion and energy control applications. It features a rated junction temperature of 150°C, a maximum repetitive forward rectified current of 1.6A and a maximum forward voltage of 1500V. The device is constructed using a silicon-based semiconductor junction which creates electrical barriers for current flow.BYS459B-1500SE3/45 can be used as a switching or rectifying device in AC to DC or DC to DC power conversion applications. As a rectifier, it allows current to flow from the anode to the cathode under forward bias conditions, meaning current only flows from the anode to the cathode. When used as a switching device, the device operates in reverse bias mode, meaning current can only flow from the cathode to the anode.The key working principle of BYS459B-1500SE3/45 starts with the bonding of two layers of semiconductor material, creating two separate PN-junctions. In the PN junction, electrons flow in one direction and holes in the other due to the difference in electric potential between the two semiconductor layers. The application of a forward bias voltage then causes electrons to tunnel through the barrier, creating a condition known as ‘reverse breakdown’ in which current flows from the cathode to the anode. When the device is reversed biased, the potential difference between the two sides of the PN junction causes the electrons to be repelled. This in turn creates a potential barrier which prevents any further current flow.In addition to its switching and rectifying capabilities, BYS459B-1500SE3/45 is also used as a voltage-controlled device in power electronics circuits, where it is commonly combined with other components such as resistors and capacitors to form boost, buck and buck-boost converters. In this application, the device works in a similar manner to the rectifying device, but its operation is also dependent on the voltage level of the supply. For example, when the voltage supplied to the rectifier exceeds the maximum breakdown voltage of the device (also known as the avalanche voltage), the device will experience current transient, creating a boost effect.Overall, the BYS459B-1500SE3/45 is a statically proven, high-voltage rectifying diode which offers an efficient way to regulate power and energy control. With its high-efficiency rectifying and voltage control capabilities, it is an ideal device for power electronics applications.

BYS459B-1500E3/81	Vishay Semic...	0.0 $	1000	DIODE GEN PURP 1.5KV 6.5A...
BYS459B-1500SE3/81	Vishay Semic...	0.0 $	1000	DIODE GEN PURP 1.5KV 10A ...
BYS459-1500-E3/45	Vishay Semic...	0.0 $	1000	DIODE GEN PURP 1.5KV 6.5A...
BYS459-1500SE3/45	Vishay Semic...	0.0 $	1000	DIODE GEN PURP 1.5KV 10A ...
BYS459B-1500E3/45	Vishay Semic...	--	1000	DIODE GEN PURP 1.5KV 6.5A...
BYS459B-1500SE3/45	Vishay Semic...	--	1000	DIODE GEN PURP 1.5KV 10A ...
BYS459F-1500E3/45	Vishay Semic...	0.0 $	1000	DIODE GEN PURP 1.5KV 6.5A...
BYS459F-1500SE3/45	Vishay Semic...	0.0 $	1000	DIODE GEN PURP 1.5KV 10A ...