Allicdata Part #: | 1740-1434-ND |
Manufacturer Part#: |
BYV29X-500,127 |
Price: | $ 0.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | WeEn Semiconductors |
Short Description: | DIODE GEN PURP 500V 9A TO220F |
More Detail: | Diode Standard 500V 9A Through Hole TO-220FP |
DataSheet: | BYV29X-500,127 Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.22932 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 500V |
Current - Average Rectified (Io): | 9A |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 8A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 60ns |
Current - Reverse Leakage @ Vr: | 50µA @ 500V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 Full Pack, Isolated Tab |
Supplier Device Package: | TO-220FP |
Operating Temperature - Junction: | 150°C (Max) |
Base Part Number: | BYV29-500 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Diodes - Rectifiers - Single: BYV29X-500,127 Application Field and Working Principle
A diode is a two-terminal electronic component that acts as an electrical switch. The two terminal sizes of a diode are anode and cathode. A diode consists of a tunnel junction that allows current to flow in one direction, known as the forward bias, but prevents it from flowing in the opposite direction, known as the reverse bias. Diodes are commonly used in circuits for controlling the flow of current.
Diodes can be classified into two categories: rectifiers and single diodes. Rectifiers are diodes used to convert alternating current (AC) into direct current (DC). Single diodes are diodes used for sequencing or isolating digital signals for low power switching. Single diodes are fast, low power switching devices used in circuit applications such as audio and communication.
The BYV29X-500,127 is a single-diode rectifier which is used in a variety of applications. This type of diode can be used in a low voltage application, such as in battery charging. It is also used in a medium voltage application, such as in renewable power generation and other power supplies. Further, this diode can be used in a high voltage application, such as in a light emitting diode (LED) lamp or other industrial applications.
The BYV29X-500,127 is a fast switching, low current, high temperature tolerant rectifier diode. It is a device with a very low voltage drop that is designed to betain stability over varying temperature and voltage ranges. This diode has a low junction capacitance, making it suitable for efficient applications.
The working principle of the BYV29X-500,127 diode is based on the P-N junction. The P-N junction is formed by the contact of two different types of doped semiconductor materials: N-type and P-type. N-type materials have a greater concentration of negative ions, or electrons, while P-type material have a greater concentration of positive ions, or holes. When the negative and positive ions meet, they form an electric field that creates a barrier, blocking the flow of electrons. This phenomenon is known as the reverse-biased effect.
When an external forward bias voltage is applied across the P-N junction, a net flow of electrons, or current, is allowed to pass through the junction. This phenomenon is called the forward-biased effect. In a single-diode rectifier such as the BYV29X-500,127 diode, a forward-bias voltage is applied, and a controlled current flows in the forward direction only. This allows the diode to accurately control the current that passes through the diode. The current is governed by the voltage applied and by the diode\'s characteristics, such as the recovery time and maximum possible forward voltage.
The BYV29X-500,127 single-diode rectifier has many advantages over other rectifiers. It is a fast switching, low-power device with a low junction capacitance and high temperature tolerance, making it suitable for efficient industrial and power applications. It is also cost-effective and highly reliable. This diode can provide a controlled current flow in forward direction and prevent current in the reverse direction, making it an ideal device for low voltage and medium voltage applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BYV26B-TR | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 400V 1A S... |
BYV26C-TR | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 600V 1A S... |
BYV27-100-TR | Vishay Semic... | 0.15 $ | 5000 | DIODE AVALANCHE 100V 2A S... |
BYV27-200-TR | Vishay Semic... | 0.16 $ | 15000 | DIODE AVALANCHE 200V 2A S... |
BYV27-200-TAP | Vishay Semic... | -- | 20000 | DIODE AVALANCHE 200V 2A S... |
BYV27-600-TAP | Vishay Semic... | -- | 20000 | DIODE AVALANCHE 600V 2A S... |
BYV25D-600,118 | WeEn Semicon... | 0.22 $ | 2500 | DIODE GEN PURP 600V 5A DP... |
BYV28-100-TAP | Vishay Semic... | -- | 12500 | DIODE AVALANCHE 100V 3.5A... |
BYV29FX-600,127 | WeEn Semicon... | 0.62 $ | 4880 | DIODE GEN PURP 600V 9A TO... |
BYV29-400,127 | WeEn Semicon... | 0.67 $ | 14644 | DIODE GEN PURP 400V 9A TO... |
BYV28-150-TR | Vishay Semic... | 0.34 $ | 7500 | DIODE AVALANCHE 150V 3.5A... |
BYV29B-500,118 | WeEn Semicon... | 0.37 $ | 1600 | DIODE GEN PURP 500V 9A D2... |
BYV29-500,127 | WeEn Semicon... | 0.6 $ | 2588 | DIODE GEN PURP 500V 9A TO... |
BYV29X-600,127 | WeEn Semicon... | 0.62 $ | 5325 | DIODE GEN PURP 600V 9A TO... |
BYV27-100-TAP | Vishay Semic... | 0.15 $ | 5000 | DIODE AVALANCHE 100V 2A S... |
BYV25FD-600,118 | WeEn Semicon... | 0.0 $ | 1000 | DIODE GEN PURP 600V 5A DP... |
BYV28-200-TAP | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 200V 3.5A... |
BYV26DGP-E3/73 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
BYV26EGP-E3/73 | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 1000V 1A ... |
BYV26E-TAP | Vishay Semic... | -- | 20000 | DIODE AVALANCHE 1000V 1A ... |
BYV26E-TR | Vishay Semic... | 0.15 $ | 55000 | DIODE AVALANCHE 1000V 1A ... |
BYV26D-TAP | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 800V 1A S... |
BYV26D-TR | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 800V 1A S... |
BYV27-050-TAP | Vishay Semic... | 0.15 $ | 1000 | DIODE AVALANCHE 55V 2A SO... |
BYV27-050-TR | Vishay Semic... | 0.15 $ | 1000 | DIODE AVALANCHE 55V 2A SO... |
BYV27-150-TAP | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 165V 2A S... |
BYV27-150-TR | Vishay Semic... | 0.15 $ | 1000 | DIODE AVALANCHE 165V 2A S... |
BYV27-600-TR | Vishay Semic... | 0.18 $ | 1000 | DIODE AVALANCHE 600V 2A S... |
BYV28-050-TAP | Vishay Semic... | 0.3 $ | 1000 | DIODE AVALANCHE 50V 3.5A ... |
BYV28-050-TR | Vishay Semic... | 0.3 $ | 1000 | DIODE AVALANCHE 50V 3.5A ... |
BYV28-100-TR | Vishay Semic... | 0.32 $ | 1000 | DIODE AVALANCHE 100V 3.5A... |
BYV28-150-TAP | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 150V 3.5A... |
BYV28-200-TR | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 200V 3.5A... |
BYV29-300-E3/45 | Vishay Semic... | 0.35 $ | 1000 | DIODE GEN PURP 300V 8A TO... |
BYV29-400-E3/45 | Vishay Semic... | 0.76 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
BYV28-600-TAP | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 600V 3.5A... |
BYV28-200-RAS15-10 | Vishay Semic... | 0.37 $ | 1000 | DIODE AVALANCHE 200V 3.5A... |
BYV29B-300HE3/45 | Vishay Semic... | 0.44 $ | 1000 | DIODE GEN PURP 300V 8A TO... |
BYV29B-400HE3/45 | Vishay Semic... | 0.44 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
BYV29B-300-E3/81 | Vishay Semic... | 0.5 $ | 1000 | DIODE GEN PURP 300V 8A TO... |
Diodes - General Purpose, Power, Switchi...
DIODE SCHOTTKY 40V 500MA SC76Diode Schot...
DIODE GEN PURPOSE DO-204ALDiode
DIODE GEN PURP 400V 1A DO41Diode Standar...
DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...
DIODE GEN PURP 400V 500MA D5ADiode Stand...