BYV29B-400-E3/81 Allicdata Electronics
Allicdata Part #:

BYV29B-400-E3/81-ND

Manufacturer Part#:

BYV29B-400-E3/81

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 400V 8A TO263AB
More Detail: Diode Standard 400V 8A Surface Mount TO-263AB
DataSheet: BYV29B-400-E3/81 datasheetBYV29B-400-E3/81 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 8A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -40°C ~ 150°C
Base Part Number: BYV29-400
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

BYV29B-400-E3/81 is a special type of diode rectifier which is in the form of a single discrete component with a range of useful features. It has an advantage in that there is no need for additional components, allowing for simpler and more compact designs. In addition, its larger reverse voltage ratings help to substantially reduce the amount of energy dissipated in the system.

This type of diode is commonly used in industrial applications, such as rectifying alternating current (AC) to direct current (DC), voltage regulating or as a switch. It may also be used as a protection device against current overloads and transient voltages.

The BYV29B-400-E3/81 diode is a popular choice due to its high current rating of up to 400 Amps, high reverse voltage of up to 800 V, and fast switching speeds. Its high current and reverse voltage ratings make it suitable for use in power rectification circuits operating at high voltages and currents, such as welding equipment and lighting systems.

The most common design of the BYV29B-400-E3/81 is a single terminal and a total gate leakage current of less than 0.1 µA. This feature makes it suitable for applications where fast switching speeds, low on-state losses, low gate turn-on and turn-off times are desired. For added protection, the diode can be encased in a hermetically sealed package, making it resistant to environmental factors such as humidity, dust, and temperature changes.

The principle of BYV29B-400-E3/81 operation is quite simple. It is based on the PN junction theory, which states that semiconductor devices will have a low resistance when current is allowed to flow in one direction and a high resistance when current is prevented from flowing in the opposite direction. In this case, the diode works by allowing current to pass through in one direction and blocking it in the other. When the forward bias is applied, the voltage between the anode and cathode drops and the diode begins to conduct current. However, when the reverse bias is applied, the voltage between the anode and cathode is increased, thus reducing the current.

The BYV29B-400-E3/81 has a range of applications, including welding rectifiers, power factor correction, DC-DC converters and uninterruptible power supplies. It is also ideal for use in renewable energy systems, such as solar and wind power, as well as electric vehicle charging systems. Its fast switching speeds, low on-state losses, and high current and reverse voltage ratings make it a highly reliable, robust and cost-efficient solution for many industrial applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "BYV2" Included word is 40
Part Number Manufacturer Price Quantity Description
BYV26B-TR Vishay Semic... -- 1000 DIODE AVALANCHE 400V 1A S...
BYV26C-TR Vishay Semic... -- 1000 DIODE AVALANCHE 600V 1A S...
BYV27-100-TR Vishay Semic... 0.15 $ 5000 DIODE AVALANCHE 100V 2A S...
BYV27-200-TR Vishay Semic... 0.16 $ 15000 DIODE AVALANCHE 200V 2A S...
BYV27-200-TAP Vishay Semic... -- 20000 DIODE AVALANCHE 200V 2A S...
BYV27-600-TAP Vishay Semic... -- 20000 DIODE AVALANCHE 600V 2A S...
BYV25D-600,118 WeEn Semicon... 0.22 $ 2500 DIODE GEN PURP 600V 5A DP...
BYV28-100-TAP Vishay Semic... -- 12500 DIODE AVALANCHE 100V 3.5A...
BYV29FX-600,127 WeEn Semicon... 0.62 $ 4880 DIODE GEN PURP 600V 9A TO...
BYV29-400,127 WeEn Semicon... 0.67 $ 14644 DIODE GEN PURP 400V 9A TO...
BYV28-150-TR Vishay Semic... 0.34 $ 7500 DIODE AVALANCHE 150V 3.5A...
BYV29B-500,118 WeEn Semicon... 0.37 $ 1600 DIODE GEN PURP 500V 9A D2...
BYV29-500,127 WeEn Semicon... 0.6 $ 2588 DIODE GEN PURP 500V 9A TO...
BYV29X-600,127 WeEn Semicon... 0.62 $ 5325 DIODE GEN PURP 600V 9A TO...
BYV27-100-TAP Vishay Semic... 0.15 $ 5000 DIODE AVALANCHE 100V 2A S...
BYV25FD-600,118 WeEn Semicon... 0.0 $ 1000 DIODE GEN PURP 600V 5A DP...
BYV28-200-TAP Vishay Semic... -- 1000 DIODE AVALANCHE 200V 3.5A...
BYV26DGP-E3/73 Vishay Semic... 0.09 $ 1000 DIODE GEN PURP 800V 1A DO...
BYV26EGP-E3/73 Vishay Semic... -- 1000 DIODE AVALANCHE 1000V 1A ...
BYV26E-TAP Vishay Semic... -- 20000 DIODE AVALANCHE 1000V 1A ...
BYV26E-TR Vishay Semic... 0.15 $ 55000 DIODE AVALANCHE 1000V 1A ...
BYV26D-TAP Vishay Semic... -- 1000 DIODE AVALANCHE 800V 1A S...
BYV26D-TR Vishay Semic... -- 1000 DIODE AVALANCHE 800V 1A S...
BYV27-050-TAP Vishay Semic... 0.15 $ 1000 DIODE AVALANCHE 55V 2A SO...
BYV27-050-TR Vishay Semic... 0.15 $ 1000 DIODE AVALANCHE 55V 2A SO...
BYV27-150-TAP Vishay Semic... -- 1000 DIODE AVALANCHE 165V 2A S...
BYV27-150-TR Vishay Semic... 0.15 $ 1000 DIODE AVALANCHE 165V 2A S...
BYV27-600-TR Vishay Semic... 0.18 $ 1000 DIODE AVALANCHE 600V 2A S...
BYV28-050-TAP Vishay Semic... 0.3 $ 1000 DIODE AVALANCHE 50V 3.5A ...
BYV28-050-TR Vishay Semic... 0.3 $ 1000 DIODE AVALANCHE 50V 3.5A ...
BYV28-100-TR Vishay Semic... 0.32 $ 1000 DIODE AVALANCHE 100V 3.5A...
BYV28-150-TAP Vishay Semic... -- 1000 DIODE AVALANCHE 150V 3.5A...
BYV28-200-TR Vishay Semic... -- 1000 DIODE AVALANCHE 200V 3.5A...
BYV29-300-E3/45 Vishay Semic... 0.35 $ 1000 DIODE GEN PURP 300V 8A TO...
BYV29-400-E3/45 Vishay Semic... 0.76 $ 1000 DIODE GEN PURP 400V 8A TO...
BYV28-600-TAP Vishay Semic... -- 1000 DIODE AVALANCHE 600V 3.5A...
BYV28-200-RAS15-10 Vishay Semic... 0.37 $ 1000 DIODE AVALANCHE 200V 3.5A...
BYV29B-300HE3/45 Vishay Semic... 0.44 $ 1000 DIODE GEN PURP 300V 8A TO...
BYV29B-400HE3/45 Vishay Semic... 0.44 $ 1000 DIODE GEN PURP 400V 8A TO...
BYV29B-300-E3/81 Vishay Semic... 0.5 $ 1000 DIODE GEN PURP 300V 8A TO...
Latest Products
IDW30E65D1

Diodes - General Purpose, Power, Switchi...

IDW30E65D1 Allicdata Electronics
PMEG4005AEA/M5X

DIODE SCHOTTKY 40V 500MA SC76Diode Schot...

PMEG4005AEA/M5X Allicdata Electronics
RGP10J-057M3/54

DIODE GEN PURPOSE DO-204ALDiode

RGP10J-057M3/54 Allicdata Electronics
1N4004-N-2-2-BP

DIODE GEN PURP 400V 1A DO41Diode Standar...

1N4004-N-2-2-BP Allicdata Electronics
CPD76X-1N5817-CT

DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...

CPD76X-1N5817-CT Allicdata Electronics
JANTXV1N6662US

DIODE GEN PURP 400V 500MA D5ADiode Stand...

JANTXV1N6662US Allicdata Electronics