Allicdata Part #: | BYW29-200-ND |
Manufacturer Part#: |
BYW29-200 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | DIODE GEN PURP 200V 8A TO220AC |
More Detail: | Diode Standard 200V 8A Through Hole TO-220AC |
DataSheet: | BYW29-200 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 1.15V @ 10A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 10µA @ 200V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220AC |
Operating Temperature - Junction: | 150°C (Max) |
Base Part Number: | BYW29-200 |
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BYW29-200 is a type of rectifier diode, which is the most common form of diodes in the current electronics market. It is made up of two PN (positive-negative) junctions, which are formed by combining two materials with differing electrical conductivity, usually silicon and germanium. This combination makes it possible for the diode to work as a rectifier, or a current converter, which is capable of converting alternating current (AC) to direct current (DC).
The BYW29-200 is a popular choice for a variety of rectifier applications, due to its high current capacity and excellent noise immunity. Its ability to handle high voltages makes it particularly useful in applications that require a large amount of power, such as in electric vehicles and industrial control systems. Additionally, its miniature size makes it an attractive option for space-constrained designs. The BYW29-200 is able to provide up to 200A of continuous current at up to 200 V, and can handle up to 400 V at 1A or 8 μs transient pulse isolation.
The working principle of the BYW29-200 rectifier is based on the phenomenon of electrical breakdown. Electrical breakdown occurs when the applied voltage across a semiconductor exceeds a certain point, typically known as the breakdown voltage. As the voltage increases, the current through the semiconductor increases exponentially, which causes the semiconductor to heat up and eventually break down. This process allows the BYW29-200 to convert alternating current (AC) to direct current (DC).
The BYW29-200 offers excellent performance and reliability when compared to other available rectifier solutions. It features a low forward voltage drop, low reverse leakage current, and low power dissipation. It also has a high stability and robustness, meaning it will perform consistently when exposed to extreme temperatures and other environmental factors. Additionally, its low thermal resistance gives it a high thermal cycling speed, which makes it suitable for a wide range of applications. Finally, it has a low switching overshoot, meaning it can switch from one voltage range to another without the risk of creating electrical noise.
In conclusion, the BYW29-200 is an excellent choice for a wide range of rectifier solutions. It offers excellent performance, reliability, and robustness, and is capable of handling high voltages and currents. Its miniature size and low thermal resistance make it well-suited for space-constrained designs, and its low switching overshoot makes it highly reliable in any application. With its wide range of applications and benefits, the BYW29-200 can be a great choice for any power management project.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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BYW29EX-200,127 | WeEn Semicon... | 0.75 $ | 1566 | DIODE GEN PURP 200V 8A TO... |
BYW29E-200,127 | WeEn Semicon... | 0.67 $ | 1787 | DIODE GEN PURP 200V 8A TO... |
BYW29ED-200,118 | WeEn Semicon... | 0.0 $ | 1000 | DIODE GEN PURP 200V 8A DP... |
BYW29-200G | ON Semicondu... | -- | 184 | DIODE GEN PURP 200V 8A TO... |
BYW29-200-E3/45 | Vishay Semic... | 0.74 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
BYW29-150-E3/45 | Vishay Semic... | 0.36 $ | 1000 | DIODE GEN PURP 150V 8A TO... |
BYW29-50-E3/45 | Vishay Semic... | 0.36 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
BYW29-100-E3/45 | Vishay Semic... | 0.79 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
BYW27-200GP-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
BYW27-400GP-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
BYW27-200GP-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
BYW27-400GP-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
BYW29E-150,127 | WeEn Semicon... | 0.66 $ | 31 | DIODE GEN PURP 150V 8A TO... |
BYW27-200GPHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
BYW27-400GPHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
BYW27-200GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
BYW27-400GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
BYW29-100HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
BYW29-150HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 8A TO... |
BYW29-200HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
BYW29-50HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
BYW29E-100,127 | WeEn Semicon... | 0.24 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
BYW29G-200-TR | STMicroelect... | -- | 1000 | DIODE GEN PURP 200V 8A D2... |
BYW29-200 | STMicroelect... | -- | 1000 | DIODE GEN PURP 200V 8A TO... |
BYW29-100801HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE ARRAY GP TO220ACDio... |
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