BYW29G-200-TR Discrete Semiconductor Products |
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Allicdata Part #: | 497-3778-2-ND |
Manufacturer Part#: |
BYW29G-200-TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | DIODE GEN PURP 200V 8A D2PAK |
More Detail: | Diode Standard 200V 8A Surface Mount D2PAK |
DataSheet: | BYW29G-200-TR Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 1.15V @ 10A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 10µA @ 200V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Operating Temperature - Junction: | 150°C (Max) |
Base Part Number: | BYW29-200 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
A BYW29G-200-TR diode is an epitaxial planar passivated PN-junction diode designed for high current rectification applications. This diode has a low forward voltage drop, good reverse leakage current, and exceptional surge current capability due to its planar passivated structure. The high thermal cycling capability can be attributed to the heat sink made of high conductivity material, which also helps to reduce power dissipation capability.
The BYW29G-200-TR is mostly used in power supply, DC-DC converter, charger, DC motor control, solenoid control, LED lighting, and telecom. It can also be used in energy storage and storage batteries, power conversion switching, power conditioning, regulated power supplies, etc. This diode is suitable for the automotive industry and in extremely harsh environments.
The working principle of this diode is based on a PN-junction. This junction forms a diode when two pieces of semiconductor material (N-type and P-type) are put in contact. The P-type material has an excess of positive electrons, while the N-type material has an excess of negative electrons. When a voltage is applied across the junction, the electrons in the N-type material accelerate towards the P-type material, which causes the current to flow.
The BYW29G-200-TR uses the tunneling effect to facilitate current flow. The tunneling effect occurs when the electrons in the N-type material tunnel through the large resistance of the PN-junction and flow into the P-type material. This produces a low forward voltage drop, good reverse leakage current, and exceptional surge current capability.
In addition, the BYW29G-200-TR has a high thermal cycling capability. The heat sink is made of a high conductivity material that helps reduce power dissipation capability. This helps the diode to withstand the high current for extended periods of time without overheating.
The BYW29G-200-TR is a reliable and versatile diode for high current applications. It is ideal for use in power supplies, DC-DC converters, chargers, energy storage, storage batteries, and other related applications. Its low forward voltage drop, good reverse leakage current, and high thermal cycling capability make it an ideal choice for harsh environment applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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BYW29EX-200,127 | WeEn Semicon... | 0.75 $ | 1566 | DIODE GEN PURP 200V 8A TO... |
BYW29E-200,127 | WeEn Semicon... | 0.67 $ | 1787 | DIODE GEN PURP 200V 8A TO... |
BYW29ED-200,118 | WeEn Semicon... | 0.0 $ | 1000 | DIODE GEN PURP 200V 8A DP... |
BYW29-200G | ON Semicondu... | -- | 184 | DIODE GEN PURP 200V 8A TO... |
BYW29-200-E3/45 | Vishay Semic... | 0.74 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
BYW29-150-E3/45 | Vishay Semic... | 0.36 $ | 1000 | DIODE GEN PURP 150V 8A TO... |
BYW29-50-E3/45 | Vishay Semic... | 0.36 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
BYW29-100-E3/45 | Vishay Semic... | 0.79 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
BYW27-200GP-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
BYW27-400GP-E3/54 | Vishay Semic... | 0.05 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
BYW27-200GP-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
BYW27-400GP-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
BYW29E-150,127 | WeEn Semicon... | 0.66 $ | 31 | DIODE GEN PURP 150V 8A TO... |
BYW27-200GPHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
BYW27-400GPHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
BYW27-200GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
BYW27-400GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
BYW29-100HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
BYW29-150HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 8A TO... |
BYW29-200HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
BYW29-50HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
BYW29E-100,127 | WeEn Semicon... | 0.24 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
BYW29G-200-TR | STMicroelect... | -- | 1000 | DIODE GEN PURP 200V 8A D2... |
BYW29-200 | STMicroelect... | -- | 1000 | DIODE GEN PURP 200V 8A TO... |
BYW29-100801HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE ARRAY GP TO220ACDio... |
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