BYW81P-200

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	200V
Current - Average Rectified (Io):	15A
Voltage - Forward (Vf) (Max) @ If:	1.15V @ 25A
Speed:	Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr):	40ns
Current - Reverse Leakage @ Vr:	20µA @ 200V
Capacitance @ Vr, F:	--
Mounting Type:	Through Hole
Package / Case:	TO-220-2
Supplier Device Package:	TO-220AC
Operating Temperature - Junction:	-40°C ~ 150°C

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BYW81P-200 is a single-phase, high-speed and low-power rectifier diode, which belongs to Diodes – Rectifiers - Single and has many application fields and working principles. The Bypass diodes are normally used in high-frequency rectifier applications such as automotive, telecom and industrial. They are also suitable for switching mode power supplies, battery chargers and inverters. These diodes are especially designed to reduce EMI (electromagnetic interference) and RFI (Radio Frequency Interference) and to provide high frequency suppression of unwanted noise. The BYW81P-200 has the following features: low forward voltage drop, low leakage current, low reverse recovery time, high frequency operation, high speed switching and high temperature operation. The BYW81P-200 is designed to operate in the -65°C to +175°C temperature range and up to +25 V maximum forward voltage. It also guarantees a maximum reverse break down voltage of 200 V. BYW81P-200 has a PN junction and capacitance with a rectifying, or conducting, section between them. The junction is made by applying a reverse bias voltage to the diode, causing electrons to flow from the cathode to the anode. As the electrons flow from the cathode to the anode, they leave their excess charge on the anode, creating a diode’s unique rectifying properties. Under a reverse bias voltage, the electrical field across the top and bottom of the diode become stronger, and the current flow across the top and bottom of the diode decrease. When the voltage goes beyond the breakdown voltage, the current increases significantly and the device is said to be in breakdown mode. The forward bias voltage applied to the diode reverse the flow of electrons, and the electrical field across the top and bottom of the diode weakened. This allows the current flow across the top and bottom of the diode to increase. By applying a positive voltage, the reverse current is decreased, allowing the device to switch faster. In conclusion, BYW81P-200 is a single phase, high-speed, low-power rectifier diode. It has an excellent low forward voltage drop, low leakage current, low reverse recovery time, high frequency operation, high speed switching and high temperature operation. The diode provides protection from EMI and RFI, and has a maximum reverse breakdown voltage of +25V. The BYW81P-200 rectifier diode is suitable for automotive, telecom and industrial applications, such as switching mode power supplies, battery chargers and inverters.

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