Allicdata Part #: | BYWB29-100-E3/81-ND |
Manufacturer Part#: |
BYWB29-100-E3/81 |
Price: | $ 0.57 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 100V 8A TO263AB |
More Detail: | Diode Standard 100V 8A Surface Mount TO-263AB |
DataSheet: | BYWB29-100-E3/81 Datasheet/PDF |
Quantity: | 1000 |
800 +: | $ 0.50840 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 20A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 25ns |
Current - Reverse Leakage @ Vr: | 10µA @ 100V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AB |
Operating Temperature - Junction: | -65°C ~ 150°C |
Base Part Number: | BYWB29-100 |
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Diodes - Rectifiers - Single
The BYWB29-100-E3/81 is a silicon planar power rectifier available in a standard package. It is a commonly used rectification component and widely used in electrical circuits. This rectifier is used protect against reverse polarity, reversed voltage, and current overloads, as well as many other applications that require protection against untimely surges and damages.
Application Field
The BYWB29-100-E3/81 is used in rectification circuits and designed for power applications. It can be used in AC/DC converters, as well as for switching, inversion, and amplification applications. As a reverse-polarity protection component, the BYWB29-100-E3/81 is also well-suited for automotive systems, motor control conduits, AC/DC power adapters and chargers, LED drivers, electronic ballasts, DC conversion systems, and production line machinery, among many other applications.
Working Principle
The working principle of the BYWB29-100-E3/81 is based on a semiconductor PN junction, which acts as a rectifier. When the PN junction is forward-biased voltage applied, there will be electron flow resulting from the PN junction. This is known as forward bias conduction. Conversely, when the PN junction is reverse bias, there will be minority charge carrier flow from the materials which makes up the PN junction, effectly blocking electron flow. This is known as reverse bias blockage.
The BYWB29-100-E3/81 rectifier is made with epitaxially grown silicon wafer for high rectification rates, fast switching times, and reliability. In addition, it has a single silicon diode with a double metallized metalloid construction. This construction provides superior rectification while also providing improved efficiency and reliability.
Conclusion
The BYWB29-100-E3/81 rectifier is a popular and reliable choice for many industrial applications. It is designed to protect against reverse polarity, reversed voltage, and current overloads, as well as many other applications that require protection against untimely surges and damages. By employing a double metallized metalloid construction, the BYWB29-100-E3/81 offers superior rectification while improving efficiency and reliability. With its many applications and qualities, it is no surprise that this rectifier remains a popular choice for many professional and industrial applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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BYWB29-100-E3/45 | Vishay Semic... | 0.51 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
BYWB29-150-E3/45 | Vishay Semic... | 0.45 $ | 1000 | DIODE GEN PURP 150V 8A TO... |
BYWB29-200-E3/45 | Vishay Semic... | 0.45 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
BYWB29-50-E3/45 | Vishay Semic... | 0.45 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
BYWB29-100HE3/45 | Vishay Semic... | 0.53 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
BYWB29-150HE3/45 | Vishay Semic... | 0.46 $ | 1000 | DIODE GEN PURP 150V 8A TO... |
BYWB29-200HE3/45 | Vishay Semic... | 0.46 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
BYWB29-50HE3/45 | Vishay Semic... | 0.53 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
BYWB29-100-E3/81 | Vishay Semic... | 0.57 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
BYWB29-150-E3/81 | Vishay Semic... | 0.57 $ | 1000 | DIODE GEN PURP 150V 8A TO... |
BYWB29-200-E3/81 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 8A TO... |
BYWB29-50-E3/81 | Vishay Semic... | 0.57 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
BYWB29-100HE3/81 | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
BYWB29-150HE3/81 | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 150V 8A TO... |
BYWB29-200HE3/81 | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
BYWB29-50HE3/81 | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
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