Allicdata Part #: | BYWB29-200-E3/81GITR-ND |
Manufacturer Part#: |
BYWB29-200-E3/81 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 200V 8A TO263AB |
More Detail: | Diode Standard 200V 8A Surface Mount TO-263AB |
DataSheet: | BYWB29-200-E3/81 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 20A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 25ns |
Current - Reverse Leakage @ Vr: | 10µA @ 200V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AB |
Operating Temperature - Junction: | -65°C ~ 150°C |
Base Part Number: | BYWB29-200 |
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A BYWB29-200-E3/81 is classified under diodes and rectifiers as a single diode. It is an epitaxial silicon diode which is widely used due to its high efficiency. Its capabilities and characteristics make it suitable for numerous applications, from voltage regulation to pre-regulation, rectification and power factor correction.
The BYWB29-200-E3/81 is designed to provide power conditioning in multiple sectors. This includes commercial and industrial lighting, appliances, healthcare, automotive electronics, consumer electronics, IT and communications, defense, aerospace, power generation and distribution systems, sustainable energy systems, machine tools, and industrial automation.
The BYWB29-200-E3/81 is especially ideal for applications like in traffic control systems and automotive electronics, due to their highly dependable construction, efficiency, and reliability. It is also frequently used in combination with high-powered LEDs and transistors, as it can handle both high-frequency inputs and large fluctuations in input and output every cycle.
The diode is known for its current rating as well, which can range from 29 amps to 200 amps. For a diode to be considered as a BYWB29-200-E3/81, it must have a nominal voltage of 400V, with the rest depending on individual manufacturers.
BYWB29-200-E3/81 diodes are designed with a switch structure, and by virtue of their construction, can handle large volumes of current without any breakdown. This makes them suitable for voltage-sensitive applications, such as in circuits where a large number of semiconductor junctions are involved, as well as in circuits that require a wide variety of voltage control (from modest voltages to high voltages).
The diode’s construction also helps it to recover quickly after surges or brief periods of overvoltage. This contributes to the BYWB29-200-E3/81’s overall operational reliability.
In essence, the working principle of the BYWB29-200-E3/81 is simple: it is designed with a switch network that can be activated and deactivated depending on the state of the current flow. In addition, the diode offers a wide range of current ratings and makes it suitable for various applications in different sectors.
The BYWB29-200-E3/81 is an excellent option for applications that require both longevity and reliable performance, making it a favorite in most electronic and electrical industries.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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BYWB29-100-E3/45 | Vishay Semic... | 0.51 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
BYWB29-150-E3/45 | Vishay Semic... | 0.45 $ | 1000 | DIODE GEN PURP 150V 8A TO... |
BYWB29-200-E3/45 | Vishay Semic... | 0.45 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
BYWB29-50-E3/45 | Vishay Semic... | 0.45 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
BYWB29-100HE3/45 | Vishay Semic... | 0.53 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
BYWB29-150HE3/45 | Vishay Semic... | 0.46 $ | 1000 | DIODE GEN PURP 150V 8A TO... |
BYWB29-200HE3/45 | Vishay Semic... | 0.46 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
BYWB29-50HE3/45 | Vishay Semic... | 0.53 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
BYWB29-100-E3/81 | Vishay Semic... | 0.57 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
BYWB29-150-E3/81 | Vishay Semic... | 0.57 $ | 1000 | DIODE GEN PURP 150V 8A TO... |
BYWB29-200-E3/81 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 8A TO... |
BYWB29-50-E3/81 | Vishay Semic... | 0.57 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
BYWB29-100HE3/81 | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
BYWB29-150HE3/81 | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 150V 8A TO... |
BYWB29-200HE3/81 | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
BYWB29-50HE3/81 | Vishay Semic... | 0.59 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
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