
Allicdata Part #: | BZD17C51PMQG-ND |
Manufacturer Part#: |
BZD17C51P MQG |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE ZENER 51V 800MW SUB SMA |
More Detail: | Zener Diode 51V 800mW ±5.88% Surface Mount Sub SMA |
DataSheet: | ![]() |
Quantity: | 1000 |
10000 +: | $ 0.05758 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 51V |
Tolerance: | ±5.88% |
Power - Max: | 800mW |
Impedance (Max) (Zzt): | 60 Ohms |
Current - Reverse Leakage @ Vr: | 1µA @ 39V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
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Introduction
BZD17C51P MQG is a single Zener diode which has a broad range of applications in electronics and power converters. It offers good stability and low leakage current while having the typically wide voltage range. This diode is robust against reverse and forward bias, making it ideal for power supply applications.
Applications of BZD17C51P MQG
BZD17C51P MQG is mainly used for transient voltage suppression. It is typically used in power supplies, DC/DC and AC/DC converters, ESD protection devices, cell phone and medical device power management, and USB chargers.
Its wide Zener range, low leakage current, and high stability make it an ideal choice for a variety of applications. It is also found in portable battery operated device charging schemes.
BZD17C51P MQG is also used in protection circuits to protect sensitive electrical components, such as MOSFETs, from reverse voltage spikes. By using this Zener diode, the surge current is limited and prevented from reaching a too-high threshold.
This diode is suitable for lightning protection applications. Its low leakage current makes it suitable for circuits that require low power consumption. Engineers also make use of this diode in low frequency oscillators.
Functioning of BZD17C51P MQG
In reverse biased condition, the voltage drops across the P and N-type material layers of the Zener diode is equal to the Zener voltage (VZ). The device can support a continuous forward current when the voltage is lesser than the VZ. Reverse biased current beneath a certain level IZK is the leakage current which is the amount of current through the diode at VZ or when the diode is reverse biased.
The Zener diode produces a larger than normal reverse leakage current when the reverse bias voltage across it exceeds the Zener voltage (VZ). This reverse bias Zener action is often used to regulate the supply voltage in applications. The Zener diode also has a very low forward voltage drop (VF) which can improve the efficiency in a power converter design.
The diode helps other components to function without interfering with their operation. It helps to maximize the voltage transfer ratio by limiting the current flow. BZD17C51P MQG is designed to protect the device from overcurrent caused by reverse bias conditions. It also helps to ensure reliable operation of the power converters.
Conclusion
BZD17C51P MQG is a single Zener diode which has a broad range of applications across a variety of industries. It offers good stability and low leakage current while having the typically wide voltage range. It can be used for transient voltage suppression, lightning protection, low frequency oscillators, protection circuits and in power supplies, DC/DC and AC/DC converters. The device can support a continuous forward current when the voltage is lesser than the Zener voltage. It also has a very low forward voltage drop (VF) which can improve the efficiency in a power converter design.
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