BZD27B12P-E3-08

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Diodes are a type of electrical component that guides the flow of electricity in one direction and can be used for a variety of applications. Zener diodes, in particular, are kind of special diodes, which generate a specific defined amount of voltage drop between their anode and cathode, when used in the reverse direction. Single Zener diodes are mostly used in bridge rectifiers, power converters, and reference regime regulators. BZD27B12P-E3-08 is a type of single Zener diodes, manufactured by Infineon Technologies, in a miniature package.

BZD27B12P-E3-08 is widely used in various light emitting diode (LED) applications. Its package includes a diffused Zener diode and an internal ESD protection diode, which makes it cost effective and space efficient. BZD27B12P-E3-08 provides a relatively high-current capacity and dose not require any external capacitor for ESD protection.

Being a single Zener diode, BZD27B12P-E3-08 can be generally used in various applications, notably, in medium-power linear voltage regulators, short-circuit protection, as well as in digital circuits. It is also applied in medium voltage DC-DC converters, switching converters, as well as similar power electronics applications like power management and power control.

The working principles of BZD27B12P-E3-08 can be best understood in two different ways; the Zener effect and avalanche effect. The Zener effect takes place when the diode is used in a reverse bias direction, a phenomenon in which the diode starts to break down and conducts a controlled current. The breakdown voltage of the diode is called the Zener Voltage. On the other hand, the avalanche effect happens when the diode enters into a reverse-biased breakdown mode, and electric current flows through the device in a power law fashion. This normally causes the Zener voltage to increase with increasing current.

In addition to the above mentioned primary functions, the BZD27B12P-E3-08 diode has its own unique advantages such as low power consumption, low power dissipation, and low junction temperature. It also comes with a fast turn-on time and low reverse leakage current. Furthermore, it is RoHS compliant and suitable for operation in harsh environmental conditions.

BZD27B12P-E3-08 offers an optimum combination of voltage regulation range and pulsed power capability. The device is designed to handle high working voltages and currents, from 4.7 V to 36 V and from -1.0 A to +150 mA respectively. It features a total power dissipation of 500 mW, a junction temperature of 150°C and an operating temperature range of -65°C to +150°C.

Overall, the BZD27B12P-E3-08 is a versatile, space efficient, and economical single Zener diode from Infineon Technologies. It is suitable for a wide range of applications, notably in light emitting diode, medium voltage DC-DC converters, short-circuit protection and digital circuits. It can be used in various other power management applications due to its various low power consumption and high volumetric efficiency. The device has a Zener voltage range of 4.7 V to 36 V and boasts a total power dissipation of 500 mW. It has an operating temperature range of -65°C to +150°C and a junction temperature of 150°C.

The specific data is subject to PDF, and the above content is for reference