| Allicdata Part #: | BZD27B7V5P-E3-18-ND |
| Manufacturer Part#: |
BZD27B7V5P-E3-18 |
| Price: | $ 0.07 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE ZENER 7.5V 0.8W DO-219AB |
| More Detail: | Zener Diode 7.5V 800mW Surface Mount DO-219AB (SM... |
| DataSheet: |  BZD27B7V5P-E3-18 Datasheet/PDF |
| Quantity: | 1000 |
| 50000 +: | $ 0.06174 |
Specifications
| Series: | Automotive, AEC-Q101, BZD27B |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Voltage - Zener (Nom) (Vz): | 7.5V |
| Tolerance: | -- |
| Power - Max: | 800mW |
| Impedance (Max) (Zzt): | 2 Ohms |
| Current - Reverse Leakage @ Vr: | 50µA @ 3V |
| Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
| Operating Temperature: | -65°C ~ 175°C |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-219AB |
| Supplier Device Package: | DO-219AB (SMF) |
Description
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Introduction
The BZD27B7V5P-E3-18 is a silicon based single Zener diode that is specifically designed to meet the stringent needs of power and automotive applications. It is an entry level yet highly reliable single Zener diode that offers excellent stability in various applications. It is very easy to use and has a wide variety of applications. In this article, we will discuss the application field and working principles of the BZD27B7V5P-E3-18.
Application Field
The BZD27B7V5P-E3-18 is specifically designed for power and automotive applications. It is an ideal diode for use in AC to DC, LV/HV Ultra-Low Power, Rad Hard, and High Speed switching, as well as voltage regulation in automotive electronics and motor control systems. The device is also suitable for high frequency rectification, ripple, overvoltage protection, LED lighting, DC to DC conversion, signal switching, and low noise power supply. Its maximum operating junction temperature of 125°C ensures high reliability in a variety of complex applications.
Working Principle
The working principle of the BZD27B7V5P-E3-18 is based on the Zener breakdown effect. In this diode, the Zener breakdown effect is caused by the high electric field on the reverse bias. When the applied voltage reaches a certain constant level, the depletion region will break down and leads to the formation of a low resistance path across the junction region. This low resistance path prevents further increase of the voltage and allows constant and controlled current flow, thus regulating the voltage at a certain voltage level. The Zener diode is characterized by its breakdown voltage, and the BZD27B7V5P-E3-18 operates with a 6.2V Zener voltage at a rated power of 200mW. The maximum reverse voltage of the diode is 6V and the maximum peak repetitive reverse voltage is 8V. The device also has a maximum reverse leakage current (IR) of 1.5mA and operating temperature range of -55°C to +150°C.
Conclusion
The single Zener diode BZD27B7V5P-E3-18 has a wide variety of applications in the field of power and automotive electronics. Its advantage lies in its excellent stability, high reliability and easy application. It operates based on the Zener breakdown effect which allows the diode to regulate the voltage at a certain given level. The device also has a maximum operating junction temperature of 125°C, a 6.2V Zener voltage and a maximum reverse voltage of 6V. Its maximum reverse leakage current (IR) is 1.5mA and its operating temperature range is -55°C to +150°C. The BZD27B7V5P-E3-18 is an ideal single Zener diode for all your needs.
The specific data is subject to PDF, and the above content is for reference
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