| Allicdata Part #: | BZD27C10PHRQG-ND |
| Manufacturer Part#: |
BZD27C10PHRQG |
| Price: | $ 0.07 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Taiwan Semiconductor Corporation |
| Short Description: | DIODE ZENER 10V 1W SUB SMA |
| More Detail: | Zener Diode 10V 1W ±6% Surface Mount Sub SMA |
| DataSheet: |  BZD27C10PHRQG Datasheet/PDF |
| Quantity: | 1000 |
| 10000 +: | $ 0.06148 |
Specifications
| Series: | Automotive, AEC-Q101 |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Not For New Designs |
| Voltage - Zener (Nom) (Vz): | 10V |
| Tolerance: | ±6% |
| Power - Max: | 1W |
| Impedance (Max) (Zzt): | 4 Ohms |
| Current - Reverse Leakage @ Vr: | 7µA @ 7.5V |
| Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-219AB |
| Supplier Device Package: | Sub SMA |
Description
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Diodes, especially Zener Diodes, are broadly used in general power management, over-voltage protection, and low-noise applications. Among these diodes, BZD27C10PHRQG stands out due to its features and specifications, especially high precision reverse voltage protection and cV characteristic curve.It is a silicon epitaxial planar Zener single diode with 4.7V nominal Zener voltage and a 1/2W power rating. The maximum allowable DC power dissipation is 500mW and the working temperature range is -55℃ to +150℃. It is also equipped with an automatic mounting function, which can save assembly costs and improve production efficiency. In order to work stably, this product needs a proper Zener voltage and current reverse voltage.BZD27C10PHRQG has very different applications, ranging from high precision over-voltage protection, low-noise performance to its peak-noise frequency performance. In addition, it\'s suitable for use in circuits with a wide range of temperatures for its tolerance for high temperatures.In terms of working principles, BZD27C10PHRQG is basically the same as other Zener diodes. It consists of two p-n junction junctions, with the n-side junction connected to the cathode and the p-side junction connected to the anode. When the current passes through the n-side junction, electrons flow into the type p layer, causing excess electrons to form a depletion layer. This creates a voltage barrier that cannot be penetrated. When a higher reverse voltage is applied to the circuit, this reverse voltage is gradually increased until it is equal to the black voltage of the diode, at which point the barrier is broken and a large current starts to flow through the diode.When it comes to the cV characteristic curve of BZD27C10PHRQG, it has the ability to rapidly absorb current when the reverse voltage is greater than the Zener voltage. This allows it to reduce noise signals, making it suitable for use in low-noise applications. In addition, it can also be used for high precision over-voltage protection due to its ability to rapidly absorb currents when a certain voltage is applied.In conclusion, BZD27C10PHRQG is a high-performance single diode with many applications, ranging from high precision over-voltage protection, low-noise performance to its peak-noise frequency performance. It offers a range of features and specifications, such as automatic mounting and its cV characteristic, while working on the same fundamental principle as other Zener diodes.
The specific data is subject to PDF, and the above content is for reference
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