BZD27C33PHRVG

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Voltage - Zener (Nom) (Vz):	33V
Tolerance:	±6.06%
Power - Max:	1W
Impedance (Max) (Zzt):	15 Ohms
Current - Reverse Leakage @ Vr:	1µA @ 24V
Voltage - Forward (Vf) (Max) @ If:	1.2V @ 200mA
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	DO-219AB
Supplier Device Package:	Sub SMA

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BZD27C33PHRVG Diodes - Zener - Single

The BZD27C33PHRVG is a type of Zener diode, which is a semiconductor device that behaves distinctively when the voltage in the junction between the two regions reaches a certain point, called the Zener breakdown voltage. The Zener diode is a uniquely designed diode that has a region of negative resistance, meaning that when a certain voltage is applied, the current actually increases with voltage–rather than decrease, which is the usual behavior of a diode. The BZD27C33PHRVG is an ultra-fast switching diode that is designed for high-frequency applications and is particularly suitable for the recovery of high-frequency resonant circuits. An integrated electrostatic shield is included to suppress EMI and provide ESD protection. This diode has a low capacitance of 5pf, making it a great choice for RF applications where high reverse transfer capacitances can be detrimental. The BZD27C33PHRVG is rated for a maximum reverse leakage current of 10uA, a maximum repetitive peak reverse voltage of 33V, and an operating temperature of -55 to 150 degrees Celsius. It has a maximum forward voltage of 0.7V up to 2A, a maximum surge current up to 10A, and a typical thermal resistance of 126C/W.This Zener diode is widely used in frequency rectifier circuits, automatic power stabilization systems, power supplies, and pulse transformers. It is well-suited for the recovery of high-frequency resonant circuits, enable logic, and for the protection of power converters. The device’s low switching speed, low capacitance, and low distortion of the voltage-current characteristic make it ideal for high-frequency rectification applications. The working principle of a Zener diode is based on the Zener breakdown effect. When a Zener diode’s reverse voltage reaches a certain threshold (the Zener voltage), electrons begin to jump across the junction, creating a path for current to flow both ways–from anode to cathode, and from cathode to anode. This effect is known as Zener Breakdown and allows the diode to conduct in reverse. The amount of reverse current is determined by the size of the junction between the two regions of the diode. The BZD27C33PHRVG is specifically designed to minimize the amount of reverse leakage current, making it well-suited for high-frequency applications. Its low capacitance and low voltage drop make it well-suited for use in RF applications where high reverse transfer capacitances can be detrimental. The BZD27C33PHRVG is a great choice for those who are looking for an ultra-fast switching Zener diode for use in high-frequency rectification applications. Its low capacitance, low voltage drop, low distortion of the voltage-current characteristic, and integrated electrostatic shield make it an ideal choice for RF applications. It is also well-suited for the recovery of high-frequency resonant circuits and for the protection of power converters.

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