BZV85-C8V2,113 Discrete Semiconductor Products

Diodes - Zener - Single

BZV85-C8V2,113 is a type of single zener diode, specifically a voltage-dependent non-ohmic semiconductor device. It functions as a critical component to provide a specified, controlled reverse voltage. This article will provide a brief discussion of these diodes, their application field and working principle.

Description and Application

A BZV85-C8V2,113 single zener diode has a reverse breakdown voltage of 8.2V when the diode symmetry is 40%. It has a zero reverse leakage current at that voltage, meaning that it is designed to have a very low reverse current once the reverse voltage reaches or exceeds 8.2V. The device has a peak power rating of 500mW, which makes it suitable for relatively lower power applications.

The BZV85-C8V2,113 single zener diode is suitable for use in a wide range of applications, such as voltage regulation in consumer electronic products, voltage clamping and clamping circuits, AC/DC converters, DC/DC converters, and other low-power applications. The diode is also used in automotive systems and equipment to provide overvoltage protection.

Working Principle

The working principle of a single zener diode is based on the principle of a reverse breakdown voltage. When a certain reverse volumetric potential is applied across the device, it breaks down, allowing current to flow in the reverse direction. This reverse flow of current is known as the Zener effect, or avalanche breakdown. The current then controls the voltage, resulting in a voltage regulation. The key parameter that affects the capability of the BZV85-C8V2,113 single zener diode to regulate the voltage is the breakdown voltage.

A single zener diode is a voltage-dependent, non-ohmic semiconductor device. It functions differently from a transistor and has no capacitance or VCC/VSS pin. The diode is typically connected in reverse-bias to a power supply and consists of two sections, anode and cathode. When reverse voltages are applied to the device, electrons in the P-type layer start to cross the junction and accumulate in the N-type layer. This establishes a space charge in the depletion region and creates a Zener breakdown voltage.

In the picture below, you can see the construction of the BZV85-C8V2,113 single zener diode. It consists of a P-type layer and an N-type layer with a depletion region between them. When reverse voltages are applied to the diode, electrons from the P-type layer cross the junction and accumulate in the N-type layer, creating the Zener breakdown voltage.

Conclusion

The BZV85-C8V2,113 single zener diode is a voltage-dependent, non-ohmic semiconductor device used to regulate and control the voltage in various low-power applications. It has a peak power rating of 500mW, and a reverse breakdown voltage of 8.2V. The diode has two sections, an anode and a cathode, and the breakdown voltage is attributed to the Zener effect. Therefore, the BZV85-C8V2,113 single zener diode is suitable for a wide range of applications in consumer electronics and automotive systems.