BZW03C120-TAP

BZW03C120-TAP refers to a single-leaded diode with a Zener voltage of 12V, nominal VZ 13V, for surface mounting. Operating at -65 ° C to +150 ° C, this is a semiconductor device intended for protecting power supply and signal lines. It is commonly used in data communication systems, infrared applications, cable receivers and CATV systems.

The diode acts as an ideal Zener diode, providing a low reverse breakdown voltage of 12V. It provides protection from overcurrent and electrostatic discharge on supply and signal lines due to its robustness. Its encapsulation technology also provides excellent heat dissipation and allows for a lightweight and highly reduced size for improved performance in high frequency and high temperature applications.

The BZW03C120-TAP single-leaded diode is based on the principle of the p-n junction, which is a form of current flow through the diode. When a bias is applied to the diode, electrons from the n-type region diffuse across the junction to the p-type semiconductor material, creating an accumulation of negative charge in the n-region and a positive charge in the p-type semiconductor material. This creates an electric field which is the driving force behind current flow in the diode. When the forward bias is applied, current flows through the junction and the diode is said to be conducting. When the reverse bias is applied, the diode is in a reverse-biased state and the current passing through the diode is greatly decreased.

The p-n junction of the BZW03C120-TAP single-leaded diode is designed to prevent the current from passing when the reverse bias is above the Zener voltage. This allows for the device to be used for protection from over current and electrostatic discharge on power and signal lines as any voltage above the Zener voltage will be blocked from passing through the diode.

This diode is also ideal for its surface mount applications in data communication systems and infrared applications due to its lightweight, small size and its high frequency operation. Its robustness and encapsulation technology enable it to provide excellent heat dissipation for longer life and improved performance in high temperature applications.