
Allicdata Part #: | BZW04-273HB0G-ND |
Manufacturer Part#: |
BZW04-273HB0G |
Price: | $ 0.06 |
Product Category: | Circuit Protection |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | TVS DIODE 273V 438V DO204AL |
More Detail: | N/A |
DataSheet: | ![]() |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
10000 +: | $ 0.05178 |
Voltage - Clamping (Max) @ Ipp: | 438V |
Supplier Device Package: | DO-204AL (DO-41) |
Package / Case: | DO-204AL, DO-41, Axial |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | Automotive |
Power Line Protection: | No |
Power - Peak Pulse: | 400W |
Current - Peak Pulse (10/1000µs): | 900mA |
Series: | Automotive, AEC-Q101, BZW04 |
Voltage - Breakdown (Min): | 304V |
Voltage - Reverse Standoff (Typ): | 273V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
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TVS (Transient Voltage Suppressor, ) - Diodes are commonly used components in electrical and electronic circuit applications to provide surge protection. BZW04-273HB0G is a TVS diode, which offers surge protection from excessive voltage transients.
The BZW04-273HB0G is a unidirectional and monolithic silicon transient voltage suppression diode. The diode is available in DO-214AB package, which has a low profile of 0.8 mm max. It offers a working voltage of 14 V and peak pulse power of 273 W. In addition, it has a power dissipation of 1 W at 25°C and maximum reverse leakage current of 5 μA at 10V.
BZW04-273HB0G is capable of providing protection against ESD (electrostatic discharge), power cross, lightning and induced surges in the automotive, industrial and communication industries. Moreover, it can be used in a wide range of applications, such as motor control, signal line protection and sensor protection.
The working principle of BZW04-273HB0G diode is based on the following concepts:
- When there is no applied reverse voltage, the BZW04-273HB0G diode is in the off-state. In this state, the diode does not conduct current.
- When the reverse voltage exceed the breakdown voltage, BZW04-273HB0G diode enters in the on-state. In this state, the diode conducts current.
- When the applied reverse voltage is less than the breakdown voltage, the diode is in the “reverse biased” condition, but it does not allow the conduction of current.
- The maximum applied reverse voltage of BZW04-273HB0G should not exceed the breakdown voltage, otherwise the diode may be damaged.
- The peak pulse power of the diode is proportional to the breakdown voltage. The higher the breakdown voltage, the higher the peak pulse power.
In conclusion, BZW04-273HB0G is a unidirectional and monolithic silicon transient voltage suppression diode, which offers surge protection from excessive voltage transients. The diode is capable of providing protection against ESD (electrostatic discharge), power cross, lightning and induced surges in the automotive, industrial and communication industries. It offers a working voltage of 14 V and peak pulse power of 273 W, and can be used in a wide range of applications, such as motor control, signal line protection and sensor protection.
The specific data is subject to PDF, and the above content is for reference
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