BZW04-11BHB0G

Voltage - Clamping (Max) @ Ipp:	18.2V
Supplier Device Package:	DO-204AL (DO-41)
Package / Case:	DO-204AL, DO-41, Axial
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Capacitance @ Frequency:	--
Applications:	Automotive
Power Line Protection:	No
Power - Peak Pulse:	400W
Current - Peak Pulse (10/1000µs):	22A
Series:	Automotive, AEC-Q101, BZW04
Voltage - Breakdown (Min):	12.4V
Voltage - Reverse Standoff (Typ):	11.1V
Bidirectional Channels:	1
Type:	Zener
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Bulk

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TVS - Diodes are an important component of selected electronic circuits. They offer protection from over-voltage conditions, ensuring that each component in the circuit is safe from damage. The BZW04-11BHB0G application field and working principle is an important part of its use and application.The BZW04-11BHB0G TVS Diode is a semiconductor device that is used in applications requiring protection from over-voltages. It is capable of withstanding extremely high transient energy inputs of up to 400 watts. It can absorb up to 8kV or more, with successively lower breakdown voltages as the energy level decreases. This makes it ideal for use in a wide range of applications, including telecom and data communications, power systems, industrial systems, audio/video systems, and automotive systems.The working principle behind the device can be explained by the concept of parasitic bipolar junction transistors (BJTs). The parasitic BJTs that form diode junctions in the BZW04-11BHB0G act as small transistors that can be switched on and off under the powerful influence of voltages. When the added voltage exceeds the device’s specified breakdown voltage, it turns on and lines up the forward-biased diode. At the same time, it induces a current flow from the supply to the ground, thereby limiting excessive voltages.This working principle is demonstrated by the BZW04-11BHB0G’s axial form factor. The diode’s axial form factor means that the anode and cathode are symmetrical along the device’s central axis, allowing uniform power and energy distribution. This results in its superior performance in dissipating energy effectively, thus protecting each component from external voltage spikes.Additionally, the BZW04-11BHB0G features a base-emitter breakdown voltage of 600V and a base-collector breakdown voltage of 1500V with a collector-emitter breakdown voltage of 400V. This allows it to protect sensitive components from transient over-voltage while drawing little to no current. The device also has a peak reverse power rating of 1AC/DC W, allowing its use in both DC and AC circuits.The BZW04-11BHB0G TVS Diode also has a fast response time (less than 10ns) and a reverse recovery time of less than 100ns. This ensures that the diode is capable of switching off quickly to avoid multiple voltage transients. Moreover, the device has a wide operating temperature range of -55°C to +125°C, allowing its use in different environments.In conclusion, the BZW04-11BHB0G is an important component of selected electronic circuits. It is capable of offering protection from overvoltage conditions and dissipating energy from transient surges adequately. As such, it is suitable for a wide range of applications, including telecom and data communications, power systems, industrial systems, audio/video systems, and automotive systems. Its fast response times and wide operating temperature range strongly highlight its importance in providing electronic protection and safety.

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