BZW04-14BHB0G

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TVS - Diodes are among the most versatile components in the electronics industry because of their ability to offer protection from voltage spikes, no matter the application. The BZW04-14BHB0G is a PN-junction diode that is designed specifically for such a purpose. It has a low-capacitance, low-voltage junction breakdown. This feature makes it a great choice for use in high-speed applications and also when fast overshoot protection is needed.

The BZW04-14BHB0G is an optimized diode to provide transient protection in the presence of high-power signals. It has an operating voltage range of 14.0V to 18.0V and can handle up to 45W. Its peak pulse power dissipation is up to 45W, making it suitable for applications such as transients from transceivers or power transistors. It also comes with a breakdown voltage of 18V. It is designed for low-capacitance operation, so it can provide even higher speeds during high-speed data transmissions.

The BZW04-14BHB0G is also optimized for low-capacitance and low-voltage junction operation. This ensures that this diode is able to offer excellent protection from ESD (electrostatic discharge) that can be caused by lightning strikes, electronic components, and accidental contact with charged objects. It also offers protection against electrical overstress (EOS) that can be caused by high-voltage surge events.

The BZW04-14BHB0G also comes with a multi-level diode protection rating which is defined by its peak pulse current rating. This rating is based on the values of on-state forward voltage drop, current density, and capacitance. The multi-level diode protection rating ensures that it is able to operate in both high power and low power applications. In addition, this diode is also designed to not cause any damage or harm to the system in which it is applied.

The working principle of a TVS - Diode is based on the PN- junction breakdown principle. This principle determines how a diode reacts to different voltages that it is exposed to, and the BZW04-14BHB0G is no different. When a voltage is applied across the diode, the electric field between the P and N regions exceeds a set threshold, at which point the junction will break down and the current will flow. This current will then cause the voltage to dissipate quickly, thus providing voltage protection and eliminating the effects of EOS or ESD.

The BZW04-14BHB0G works to provide transient protection thanks to its low-capacitance and low-voltage operation. It is designed to be used in high-speed applications, as well as to provide high-power protection against ESD. It features a breakdown voltage of 18V, allowing it to be used in a variety of different applications.

The BZW04-14BHB0G has a wide range of application fields, such as medical devices, communications, consumer electronics, and automotive electronics. In addition, it can also be used in industrial applications to provide enhanced high-speed data transmission protection. Due to its wide range of applications and its ability to provide transient protection, this diode has become an essential component for high-reliability electronics.

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