Voltage - Clamping (Max) @ Ipp:	246V
Supplier Device Package:	DO-204AL (DO-41)
Package / Case:	DO-204AL, DO-41, Axial
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Capacitance @ Frequency:	--
Applications:	Automotive
Power Line Protection:	No
Power - Peak Pulse:	400W
Current - Peak Pulse (10/1000µs):	1.6A
Series:	Automotive, AEC-Q101, BZW04
Voltage - Breakdown (Min):	171V
Voltage - Reverse Standoff (Typ):	154V
Bidirectional Channels:	1
Type:	Zener
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Box (TB)

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TVS - Diodes

Introduction

TVS - Diodes, also known as Transient Voltage Suppressors (TVSs), are a type of semiconductor protection device used to protect electrical and electronic circuits from electrostatic discharge (ESD), overvoltage, and lightning induced transients. This type of semiconductor device is often utilized in industrial, automotive, and telecom environments, as it offers superior protection against damaging fluctuations in power and voltage. It is important to understand how TVS - Diodes work in order to ensure proper selection and use.

BZW04-154BHA0G Application Field and Working Principle

The BZW04-154BHA0G is an ultra-low capacitance, ESD/lightning transient suppressor device. It is typically used in consumer electronics, communications, mobile devices, and automotive applications where protection from ESD and lightning surges is required.The BZW04-154BHA0G works via the principle of reverse biasing. Reverse biasing is a phenomenon in which an electric current flows in the opposite direction to that expected in the device. When the voltage applied to the device exceeds the normal level of the diode, a breakdown occurs, causing an avalanche current to flow, thus providing protection from the transient pulse event.The BZW04-154BHA0G transient suppressor device contains a pair of complementary P-channel and N-channel field-effect transistors (FETs). When a voltage higher than the normal level is applied, the FET\'s gate voltage is converted into a current, thus allowing a path for the reverse current to flow and provide protection from the transient pulse event.Furthermore, the BZW04-154BHA0G offers very low capacitance, making it suitable for ultra-high speed data transmission applications. Additionally, its reverse stand-off voltage is relatively low, making it suitable for low-voltage applications, while its ESD protection device also provides adequate protection up to 8kV contact and 15kV air discharge.

Components and Construction

The BZW04-154BHA0G device is constructed using a proprietary Glass-N silicon process for superior performance. This process ensures that the device will remain relatively cool, thus reducing heat dissipation and providing reliable performance.The device is built with a Melf case, which provides the necessary mechanical support for the device and ensures it fits into circuit boards with minimum thermal resistance and capacitance. Additionally, the device is designed to meet electrical and mechanical conditions specified by JEDEC Standard EIAJ-T5B for lead-free, surface mounted packaging of components.

Conclusion

The BZW04-154BHA0G device is an ideal choice for use in consumer electronics, telecommunications, automotive networks, and other applications, due to its superior protection against ESD and lightning transients. It is constructed using a proprietary Glass-N process for superior performance and has a Melf case for easy mounting and reliable performance. Additionally, the ultra-low capacitance and reverse stand-off voltage of this device make it an ideal candidate for a variety of applications, including ultra-high speed data transmission.

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