BZW04-299-E3/54

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TVS (Transient Voltage Suppressor) diodes are semiconductor devices engineered to protect sensitive electronic components and systems from voltage surges, such as those caused by lightning or inductive switching, by shunting the excess energy away. They are designed to operate in a short time frame, thereby allowing the system to remain operational, while still providing the necessary protection.

The BZW04-299-E3/54 is a unidirectional, low-capacitance transient voltage suppressor diode. It has a nominal breakdown voltage of 1.80V, and it can withstand a continuous avalanche current of up to 5A. It has a maximum peak power rating of 10,000W (10kW).

The BZW04-299-E3/54 is designed for use in a wide range of applications including AC power line protection, data line protection, PC board protection, and automotive systems. It can be used as a single device in order to protect a single component, or it can be used in an array of devices in order to provide protection to entire systems. The low-capacitance design makes it well-suited for use in high-speed data line protection applications. The device is also rated to operate from -65°C to +175°C, which makes it suitable for use in automotive systems.

The working principle of a TVS diode is simple yet effective. The diode is constructed with a reverse-biased PN-junction, which makes it sensitive to high voltage spikes. When a voltage spike higher than the breakdown voltage is applied, the diode dynamically breaks down and reduces the voltage across it, thereby preventing the sensitive equipment from being damaged. The voltage across the diode is then safely dissipated as heat.

In summary, the BZW04-299-E3/54 TVS diode is an ideal choice for surge protection applications that require fast response time, low capacitance, and high breakdown voltage. Its low-capacitance design is especially suitable for high-speed data line protection, and its wide operating temperature range allows it to be used in automotive systems as well. It operates on the simple principle of reverse-biased PN-junctions, which quickly and safely dissipates any voltage spikes greater than the diode\'s breakdown voltage.

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