BZX384B68-E3-08

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Voltage - Zener (Nom) (Vz):	68V
Tolerance:	±2%
Power - Max:	200mW
Impedance (Max) (Zzt):	240 Ohms
Current - Reverse Leakage @ Vr:	50nA @ 47.6V
Operating Temperature:	-55°C ~ 150°C
Mounting Type:	Surface Mount
Package / Case:	SC-76, SOD-323
Supplier Device Package:	SOD-323

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Introduction

The BZX384B68-E3-08 diode is a single Zener diode with a breakdown voltage of 6.8V and a maximum power dissipation of 500mW. It is widely used in various applications. This article provides an overview of BZX384B68-E3-08 application field and working principle.

BZX384B68-E3-08 Applications

The BZX384B68-E3-08 diode is primarily used in frequency multiplication circuits, overvoltage protection circuits, and voltage reference circuits.In frequency multiplication circuits, these diodes provide switching for frequency multiplication at unprecedented frequencies and reliability. The BZX384B68-E3-08 can be used to make multi-phase clock pulse generators to efficiently generate pulses at high frequencies. The BZX384B68-E3-08 can also be used in overvoltage protection circuits. This Zener diode is designed to clamp voltage to 6.8V thus protecting other electronic components. For example, in power supply circuits, the BZX384B68-E3-08 can protect ICs from voltage that is too high due to input or load variations.As for its last application, this diode can be used in voltage reference circuits. The two terminals of the Zener diode are reverse biased by an external voltage source. The applied voltage will stay below breakdown voltage of 6.8V, thus creating a voltage reference. This is particularly useful in regulating the output of a power supply or in creating a reference voltage for other circuits.

BZX384B68-E3-08 Working Principle

The BZX384B68-E3-08 diode is a single Zener diode with a breakdown voltage of 6.8V. Its operation relies on the principle of Zener breakdown. Zener breakdown is the ability of a reverse-biased Zener diode to conduct current when the applied voltage across the diode exceeds its breakdown voltage. When a voltage is applied to the diode, the electrons move through the p-n junction and are accelerated to a high level of potential energy. If the voltage is large enough, the energetic electrons will overcome the potential barrier, cross the junction and create an electric current. The amount of current depends on the applied voltage and the Zener breakdown voltage. This Zener breakdown occurs when the applied voltage is equal to or greater than the Zener breakdown voltage. In the case of the BZX384B68-E3-08 diode, that breakdown voltage is 6.8V, and the diode’s maximum power dissipation is 500mW. The working principle of the diode is based on the fact that the voltage applied to the device will remain below 6.8V no matter the input or load variations.

Conclusion

In conclusion, the BZX384B68-E3-08 is a single Zener diode with a breakdown voltage of 6.8V and a maximum power dissipation of 500mW, which makes it suitable for a variety of applications. For example, it can be used in frequency multiplication circuits, overvoltage protection circuits, and voltage reference circuits. These applications rely on the device’s operation principle of Zener breakdown, in which the diode starts conducting current when the applied voltage across the diode exceeds its breakdown voltage. Understanding the features and operation of the BZX384B68-E3-08 can help in determining its suitability for various applications.

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