BZX55B62-TAP Allicdata Electronics
Allicdata Part #:

BZX55B62-TAP-ND

Manufacturer Part#:

BZX55B62-TAP

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 62V 500MW DO35
More Detail: Zener Diode 62V 500mW ±2% Through Hole DO-35
DataSheet: BZX55B62-TAP datasheetBZX55B62-TAP Datasheet/PDF
Quantity: 1000
30000 +: $ 0.01693
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Box (TB) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 62V
Tolerance: ±2%
Power - Max: 500mW
Impedance (Max) (Zzt): 150 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 47V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BZX55B62-TAP diode is a single Zener diode manufactured by STMicroelectronics. It is designed specifically for use in telecom, power supply, and general industrial applications and can be used as a protection device. The diode is capable of operating with a breakdown voltage range of -6V to -62V.

The diode uses avalanche technology in order to help reduce the effects of noise and ensure more consistent performance over temperature. This type of diode is also designed to be used in circuits where reverse polarity protection needs to be provided. This can be particularly useful in applications such as telecommunication equipment where high temperatures and humidity can cause significant component degradation.

The diode is constructed from high quality, low-cost Gallium Arsenide (GaAs) materials and is encapsulated in an encapsulated lead-frame package. This type of diode is also able to withstand high input and output power ratings which makes it well suited for use in a variety of applications. In order to ensure long-term reliability, the diode is also independently tested for both ESD (electrostatic discharge) and surge protection.

The working principle of the BZX55B62-TAP is based on the concept of avalanche breakdown. When a current is passed through the diode, the voltage across the diode increases until it reaches the breakdown voltage where it is no longer able to resist. At this point, an avalanche of electrons is created, which increases the current flow in the circuit.

The high-speed switching characteristics of the BZX55B62-TAP, combined with its excellent ESD and Surge protection capabilities, make it an ideal choice for a wide range of applications. It is generally used as a protection device in telecom, power supply, and industrial applications, as well as in general consumer applications such as television or radio. The diode can also be used to protect circuits from static electricity, which can damage sensitive equipment.

The specific data is subject to PDF, and the above content is for reference

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