BZX55F10-TAP

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A single Zener diode is a diode that when reverse biased, allows a large reverse voltage to flow around the diode and be dissipated into the diode\'s anode. The BZX55F10-TAP is an example of a single Zener diode and its potential uses and operational principles comprise the following.

Application Field

The BZX55F10-TAP has a large number of uses, due to its multiple characteristics and design. For example, it is able to be used in situations requiring protection against dangerous voltages and surges, along with applications involving the stabilization and energy-saving features of the diode. It can also be employed in clamping and filtering applications, depending on the desired results.

The size and specifications of the BZX55F10-TAP are 6.8 × 2.2 mm, with a power dissipation of 1.5 W and a maximum reverse voltage of 10V. Its cathode is also marked with a tap mark which identifies the diode.

When considering its use for surge protection, for example, the BZX55F10-TAP is able to absorb the high-energy impulses that can result from electrical lightning or power surges, thus preventing the further propagation of the surges and their devastating effects on the linked electrical devices.

Working Principle

The BZX55F10-TAP functions as a single Zener diode, which operates on the principle of Zener breakdown, transforming reverse voltage into a regulated voltage when reverse biased. This is due to its closely spaced electron energy levels. When the reverse bias becomes large enough, some of the electrons become free in the conduction band and a Zener diode current flow occurs.

The current flow is a unique process that involves two main stages - the avalanche breakdown and the Zener breakdown. During the avalanche breakdown, the reverse voltage increases and thus electrons are released from the conduction band and become free charge carriers, leading to an increase in current flow.

The Zener breakdown, which occurs shortly after, is the actual breakdown of the diode and occurs when the electrons released during the avalanche breakdown create an opposing electric field, reducing the electric field strength to a level where further electrons can overcome the height of the barrier between the valence band and conduction band.

The BZX55F10-TAP is unique in that it has the ability to award a tighter voltage tolerance in comparison to other types of Zener diodes due to its larger number of differences between its highest and lowest energy subbands.

Being able to absorb surges as well as its ability to regulate a steady voltage when reverse biased, the BZX55F10-TAP demonstrates the skills and application of a single Zener diode with a remarkable efficiency.

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