BZX55F12-TR

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

A BZX55F12-TR diode is a single, low-power Zener diode that is primarily used for protecting sensitive components from damage caused by external influences, such as voltage and current surges. Zener diodes are fabricated using a semiconductor material that allows current to flow in only one direction, usually from anode to cathode. When a reverse bias voltage, which is greater than the diodes breakdown voltage, is applied, a sharp increase in the current occurs. This characteristic allows the BZX55F12-TR to be used for controlling the current, decreasing potential damage.

The BZX55F12-TR has a breakdown voltage of 12V and has a power dissipation of 500mW. The maximum clamp current that the diode can produce is 200mA and the maximum reverse leakage current is 100uA. This device\'s reverse bias zener voltage is tested using Pulse Meters and the typical reverse breakdown voltage has a 5% tolerance. The BZX55F12-TR can also be used as a low-power limiter with its low leakage current at room temperature. This allows it to be used as a shunt clamp to protect circuits from over-voltage peaks.

The working principle of the BZX55F12-TR diode can be explained using basic zener diode characteristics and knowledge of electricity. Most semiconductor materials feature a diode that conducts current only in one direction. This is known as a forward bias direction, which is when electricity flows from anode to cathode. The BZX55F12-TR is a low-power, single Zener diode, meaning it is subjected to a reverse bias when used. This involves electricity flowing from cathode to anode, known as reverse conduction.

When a reverse bias voltage is applied, some of the electrons from the semiconductor begin to break down and flow in the reverse direction as current. At a certain voltage, usually the breakdown voltage of the semiconductor, this current increases exponentially. This is known as the Zener effect and is caused by the presence of the internal electric field, which causes the breakdown of the electrons. This reaction to voltage enables the device to be used in overvoltage protection and voltage regulation.

The application fields of the BZX55F12-TR diode are diverse. This device can be used for hardware protection in items such as automobiles, off-grid renewable energy systems, and medical electronics. It can also be used in automotive warning systems to detect and protect against disruptions to the vehicles electrical system. Furthermore, this device is ideal for memory protection chips in computers, since it is low power and has a low leakage current.

In summary, the BZX55F12-TR is a low power Zener diode used for protecting sensitive components from external influences, such as voltage and current surges. The device features a power dissipation of 500mW and a breakdown voltage of 12V. Its working principle is based on the breakdown of electrons in a semiconductor material, which enables it to be used for overvoltage protection and voltage regulation. The diode is most commonly used in hardware protection in items such as automobiles, off-grid renewable energy systems, medical electronics, and memory protection chips.

The specific data is subject to PDF, and the above content is for reference