BZX55F5V6-TR

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Diodes – Zener – Single are widely used in a variety of applications. The BZX55F5V6-TR is one of the common types used in this category. The specific details and application fields of the BZX55F5V6-TR can be broken down into three main areas: application fields, working principle, and technical specifications.

Application fields

The BZX55F5V6-TR is a Zener diode primarily used in a number of high-speed switching power supplies and DC-DC converters. It is primarily used for the protection of electronic circuits, for the regulation of voltages, for the rectification and conversion of alternating electric current, and for low-frequency electric wave shaping. It is also used in voltage-controlled voltage circuits and to limit the reverse recovery current, among other uses.

The BZX55F5V6-TR is also utilized in telecoms, digital circuits and audio metering applications due to its low reverse leakage and high forward recovery current capacity. It is also used for voltage regulation in transistors, low-pressure discharge lamps, semiconductor lights, and other sensitive electrical equipment.

Working Principle

The BZX55F5V6-TR is a silicon-based Zener diode built with radial axial hermetically sealed construction. The diode\'s cooling is provided by air or optional thermo-electric cooling. The diode rectifies and clamps voltage, allowing reverse currents up to a certain amount when the forward voltage reaches a breakdown voltage level, allowing the voltage to be stabilized. This effectively “clamps” the voltage across the diode, allowing it to remain stable.

When the Zener diode is placed with an anode connected to the positive terminal of a DC power supply and a cathode connected to the negative terminal, the current in the diode begins to rise when the applied voltage reaches a predetermined voltage. At this point, the diode begins to act as a rectifier, passing current from the negative terminal to the positive terminal.

When the voltage reaches the predetermined breakdown level of the diode, the current passing through the diode will increase rapidly to a level limited by the series resistance and the Zener impedance. The specific level of the Zener impedance depends on the type of Zener diode used, but can generally be expected to range from a few millimhos to around 50 millimhos. This difference in current flow is then expressed as a voltage across the diode, effectively clamping it and allowing it to remain stable.

Technical Specifications

The BZX55F5V6-TR is designed to support a maximum operating temperature of 125°C and a maximum storage temperature range of -65°C to +200°C. It features a reverse current of 35 μA, a forward voltage of 5.2V, and a voltage rating of 5.6V. Its power dissipation is 312.22 mW and its Zener impedance is 5.4 mΩ.

The BZX55F5V6-TR also features a total capacitance (C0) of 1.24 pF and a junction capacitance (Cj) of 0.52 pF. Its reverse voltage is 7V and its peak reverse current is 7.3 mA. Its maximum forward current is 3.125 A and its pulse forward current is 0.5 A.

The BZX55F5V6-TR is rated for an avalanche energy of 90 µJ and has a lead-free compatibility rating of UL94V-0. Its ESD classification is 4kV HBM and its MSL rating is 3.

In conclusion, the BZX55F5V6-TR is a versatile Zener diode primarily used in a variety of power supplies and DC-DC converters. It is capable of providing the required protection and regulation of voltages while limiting the amount of reverse current, making it suitable for a wide range of applications. In addition, its small size and low power consumption make it an attractive solution for many designs.

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