BZX84B16-E3-08 Allicdata Electronics
Allicdata Part #:

BZX84B16-E3-08GITR-ND

Manufacturer Part#:

BZX84B16-E3-08

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 16V 300MW SOT23-3
More Detail: Zener Diode 16V 300mW ±2% Surface Mount SOT-23-3
DataSheet: BZX84B16-E3-08 datasheetBZX84B16-E3-08 Datasheet/PDF
Quantity: 15000
1 +: $ 0.03000
10 +: $ 0.02910
100 +: $ 0.02850
1000 +: $ 0.02790
10000 +: $ 0.02700
Stock 15000Can Ship Immediately
$ 0.03
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 16V
Tolerance: ±2%
Power - Max: 300mW
Impedance (Max) (Zzt): 40 Ohms
Current - Reverse Leakage @ Vr: 50nA @ 11.2V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BZX84B16-E3-08 diode is a single skin barrier Zener diode, making it ideal for certain electronic equipment applications. This versatile component provides a low cost, low voltage, high speed and low voltage drop alternative to other Zener and barrier diode components. The component is manufactured using an epoxy encapsulated package and features a high temperature operating capability. It is available in two and three lead designs, with a maximum voltage rating of 16V and a maximum current rating of 500 mA.

This component is commonly used in circuits where reverse diode protection is needed, due to its low forward voltage drop and high surge capacity. The component is also used in environments where transient protection against power surges is necessary, such as avionics and automotive electronics equipment. Additionally, it can be used in switching circuits and RF power amplifier applications.

The BZX84B16-E3-08 component’s working principle is based on the application of a reverse bias voltage across its leads, or anode and cathode. This creates a reverse current path, with the diode blocking the forward current flow. The forward bias voltage causes the reverse current to be zero; therefore, no reverse current flows. Under these conditions, the voltage drop across the component is negligible. When reverse bias voltage is applied, current begins to flow in the reverse direction due to the minority carrier electrons which carry the reverse current.

Reverse current flow is limited by the breakdown voltage of the component. The breakdown voltage is determined by the junction temperature and the amount of dopants used in the Zener diode. When operating at the bracketed ratings, a greater amount of current will be allowed to flow in the reverse direction and the junction temperature will be higher than under normal conditions. This is primarily due to the increased dopant concentration, which increases the number of minority carrier electrons available to carry the current.

The BZX84B16-E3-08 component is used in various industries and applications, including automotive electronics, power supplies, motor control, switching circuits and RF power amplifiers. Due to its low cost and high speed, it is a popular choice for high voltage and low power electronic designs. The component is available in both TO-92 and TO-220 packages and is RoHS compliant. The component is also available with a variety of options, including bypass and transient protection diodes, allowing for greater flexibility in its use.

The specific data is subject to PDF, and the above content is for reference

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