BZX884-C12,315 Discrete Semiconductor Products

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The BZX884-C12,315 from ON Semiconductor is a Zener Diode optimized for high speed applications in general purpose or high frequency circuits. It has a breakdown voltage Vz of 12.3 V, a maximum current I max of 400 and a maximum power dissipation of 500 mW at 50 kHz and 500 mV of reverse bias.

Zener diodes are special diodes that operate in reverse biased conditions, allowing for a low voltage drop (Vz) when the external voltage reaches the breakdown value (Vz). As the external voltage remains at or over the breakdown voltage, it causes the diode to conduct current, allowing it to embed itself in the circuit and affect the conductive element’s characteristics.

BZX884-C12,315 applications include general purpose circuits, high frequency circuits, and low voltage regulation with good stability. These diodes can be used as rectifiers, voltage limiters, and transient absorbers in general purpose circuits and they are particularly suitable for applications requiring high speed response such as protection circuits. BZX884-C12,315 working principles involve the reverse biasing of PN junctions, using a wide range of voltages to affect the conductive elements.

The reverse voltage of the diode is used to create an electric field which in turn creates an avalanche breakdown of the junction. This is achieved by increasing the applied reverse voltage until its electric field reaches the breakdown voltage of the PN junction, at which point free charge carriers are generated, allowing for current flow. Furthermore, in addition to the avalanche breakdown, the BZX884-C12,315 relies on a Zener effect to control the current flow.

The Zener effect results from a forward biased PN junction and it is used to obtain a more predictable voltage reference. This effect occurs when an applied voltage exceeding the breakdown voltage temporarily increases the number of charge carriers and causes a reverse current to flow before returning to its original state. The combination of the avalanche breakdown and the Zener effect makes the BZX884-C12,315 an ideal choice for use in high speed and low voltage regulation applications.

In summary, the BZX884-C12,315 Zener diode from ON Semiconductor is ideal for general purpose circuits and high frequency circuits, providing excellent voltage regulation as well as good stability. Its working principle involves avalanche breakdown and Zener effect and it is designed to be highly reliable, efficient, and economical.

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