| Allicdata Part #: | BZX84B33-FDITR-ND |
| Manufacturer Part#: |
BZX84B33-7-F |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | DIODE ZENER 33V 300MW SOT23 |
| More Detail: | Zener Diode 33V 300mW ±2% Surface Mount SOT-23 |
| DataSheet: | BZX84B33-7-F Datasheet/PDF |
| Quantity: | 1000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Voltage - Zener (Nom) (Vz): | 33V |
| Tolerance: | ±2% |
| Power - Max: | 300mW |
| Impedance (Max) (Zzt): | 80 Ohms |
| Current - Reverse Leakage @ Vr: | 100nA @ 23.1V |
| Voltage - Forward (Vf) (Max) @ If: | 900mV @ 10mA |
| Operating Temperature: | -65°C ~ 150°C |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT-23 |
| Base Part Number: | BZX84B33 |
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The BZX84B33-7-F is a type of single Zener diode designed to deliver reliable overvoltage and reverse voltage protection. BZX84B33-7-F is equipped with a package size of SOT-23, which makes it one of the smallest Zener diodes available on the market.
A Zener diode is a type of diode in which a special p-n junction is designed to allow the reverse current to flow in the diode when a certain level of reverse voltage is applied. The BZX84B33-7-F has a peak repetitive reverse voltage rating of 33V, which means that it can handle maximum reverse voltage up to 33V. It has a forward voltage of typical 1.1V and maximal 1.2V. The other operating specifications for the BZX84B33-7-F include:
- Thermal Resistance: 100°C/W
- Power Dissipation: 200 mW
- Reverse Stand-off Voltage Range: 19V to 33V
- Package Outline: SOT-23
The BZX84B33-7-F is commonly used in applications requiring overvoltage and reverse voltage protection, such as battery charge controllers, consumer electronics, and automotive systems. It is also used for controlling the on/off switching of various types of loads. The SOT-23 package of the BZX84B33-7-F is also suitable for compact size circuit configurations.
In terms of its structure, the BZX84B33-7-F features a junction that is constructed of N-type and P-type doped semiconductor material. This junction consists of a heavily doped P-type substrate that has a very thin layer of N-type material at one end and a heavily doped N-type layer at the other end. This junction is designed to produce a Zener breakdown when the reverse voltage is in the designated range.
When the reverse voltage exceeds its designed voltage, the BZX84B33-7-F diode conducts its reverse current. This current flows between the P and N layers, producing the Zener breakdown. The Zener breakdown then causes the electrical energy to be released in the form of visible light. This releases the excess reverse voltage, thus providing the required overvoltage protection.
The BZX84B33-7-F is often chosen as the primary reverse voltage protection diode due to its small size, high temperature tolerance, and relatively low cost. It provides reliable overvoltage protection in many different applications and is also useful for controlling the on/off switching of various types of loads.
The specific data is subject to PDF, and the above content is for reference
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BZX84B33-7-F Datasheet/PDF