BZX84C3V6 TR

The BZX84C3V6 is a single, 500mW Zener diode that offers good power capability, high-temperature stability and low impedance. Its power rating of 500mW allows it to be used in a wide range of applications, ranging from power supplies and circuits to RF amplifiers and antennas. Its low impedence makes it ideal for use in high-speed circuits, while its high-temperature stability ensures that its operations remain temperature-dependent at power levels up to around 1 watt.

The BZX84C3V6 is designed for use as a general-purpose Zener diode, typically providing voltage regulation or reverse-bias protection in electronic circuits. Its high power rating allows it to withstand significant current than other Zener diodes of similar specifications, making it a particularly versatile and useful choice for a wide range of applications.

The BZX84C3V6 is composed of a highly crystalline P-type silicon substrate, sandblasted for improved electrical properties. The diode employs a lightly doped n-type diffusion layer for high-temperature stability. The substrate and diffusion layer form a double-diffused junction, allowing for a high level of breakdown performance and an accurate Zener voltage. The diode also includes a protective trench to improve the device’s surge performance against electrostatic discharge and other transient voltages.

The BZX84C3V6 diode exhibits relatively linear conduction within its Zener voltage range, with breakdown voltage varying only slightly when subjected to large changes in temperature or current intensity. The device has a nominal Zener voltage of 3.6V and a temperature coefficient of about 6mV/°C. The device also has a maximum reverse surge current rating of 10A and a maximum reverse voltage of 85V.

In terms of application fields, the BZX84C3V6 is a popular choice for applications in power supplies, RF amplifiers, antennas, audio and video players/recordings, and electronic equipment. It is also particularly well-suited for use in low-cost power supplies and circuits, as its low impedance and high-temperature stability offer good overall performance and enable long operational life.

The power rating, temperature coefficient, and voltage stability of the BZX84C3V6 make it a particularly good choice for applications requiring a high level of performance in power-hungry circuits. In terms of working principle, the diode acts as a simple Zener diode, wherein a reverse-bias voltage applied to it causes a breakdown of the junction, allowing a certain amount of current to flow in the reverse direction. This stores as a voltage drop proportional to the amount of current and is known as the Zener voltage. The breakdown voltage of the BZX84C3V6 is stable over a wide range of temperatures and currents, making it an ideal choice for voltage regulation, ESD protection, and signal control.