BZX84C3V9W-7-F Allicdata Electronics
Allicdata Part #:

BZX84C3V9W-FDITR-ND

Manufacturer Part#:

BZX84C3V9W-7-F

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: DIODE ZENER 3.9V 200MW SOT323
More Detail: Zener Diode 3.9V 200mW ±5% Surface Mount SOT-323
DataSheet: BZX84C3V9W-7-F datasheetBZX84C3V9W-7-F Datasheet/PDF
Quantity: 3000
3000 +: $ 0.04347
6000 +: $ 0.03912
15000 +: $ 0.03478
30000 +: $ 0.03260
75000 +: $ 0.02891
Stock 3000Can Ship Immediately
$ 0.05
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 3.9V
Tolerance: ±5%
Power - Max: 200mW
Impedance (Max) (Zzt): 90 Ohms
Current - Reverse Leakage @ Vr: 3µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Base Part Number: BZX84C3V9
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Diodes - Zener - Single

BZX84C3V9W-7-F is a silicon epitaxial planar zener diode, designed for use in stabilizing and clipping circuits with high power rating. This diode is especially suitable for voltage regulating, pulse generation, switching and signal processing applications.

Application Field

The BZX84C3V9W-7-F is a versatile device commonly used for voltage regulation, DC-DC converters, TV receivers, laser diodes, LCDs, mobile devices, automotive electronics and other high power applications.

The device has a zener breakdown voltage of 3.9 volts and a maximum power dissipation of 500 mW. It is also capable of operating in temperatures ranging from -55°C to 150°C. The device is available in SOD123 and MiniMELF packages.

Working Principle

This device works on the principle of avalanche breakdown. When a positive voltage is applied to the diode, it passes through a region in the junction where the electric field is strong enough to cause an avalanche breakdown. This causes electrons to be released and the electric current can flow through the diode.

When a reverse voltage is applied, it will create an electric field in the reverse direction. If the reverse voltage is sufficiently high, the electric field strength will reach a point where it will cause an avalanche breakdown. This will trigger the release of electrons and create a flow of current.

The BZX84C3V9W-7-F diode is designed to have a zener voltage of 3.9 volts, meaning it will only begin to conduct when a reverse voltage greater than 3.9 volts is applied. This is beneficial in supplying a constant voltage to a load and preventing the voltage from fluctuating too much from the intended value.

Conclusion

The BZX84C3V9W-7-F diode is a reliable and versatile component used in a vast array of applications. Its low power and tight voltage regulation make it an ideal solution for numerous high power applications. With its ability to withstand temperatures ranging from -55°C to 150°C and its wide range of packages it can easily be integrated into a variety of designs.

The specific data is subject to PDF, and the above content is for reference

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