| Allicdata Part #: | BZX84C6V8-G3-08-ND |
| Manufacturer Part#: |
BZX84C6V8-G3-08 |
| Price: | $ 0.02 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE ZENER 6.8V 300MW SOT23-3 |
| More Detail: | Zener Diode 6.8V 300mW ±5% Surface Mount SOT-23-3 |
| DataSheet: | BZX84C6V8-G3-08 Datasheet/PDF |
| Quantity: | 1000 |
| 15000 +: | $ 0.02204 |
| Series: | Automotive, AEC-Q101 |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Voltage - Zener (Nom) (Vz): | 6.8V |
| Tolerance: | ±5% |
| Power - Max: | 300mW |
| Impedance (Max) (Zzt): | 15 Ohms |
| Current - Reverse Leakage @ Vr: | 3µA @ 4V |
| Operating Temperature: | -55°C ~ 150°C |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT-23-3 |
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The BZX84C6V8-G3-08 is a single Zener diode, a type of diode that has a breakdown voltage at which a specified current is allowed to flow. It\'s designed especially for digital circuit applications like overvoltage protection and clipping, as well as high-frequency low-level applications. When in use, it dissipates a maximum power of 1W and provides a high level of reliability.
Application Fields
The BZX84C6V8-G3-08 can be applied in a wide range of digital circuit applications to serve as an effective overvoltage protection device and clipping function. It is mainly applied in high-powered circuits, such as motor control circuits, and other applications that require the protection of the circuit components and circuit boards from electrical overstress due to power transients. This Zener diode can also provide low-level clipping and overvoltage suppression in high-frequency applications, such as radio-frequency circuits and high-frequency power amplifiers, to protect the receiver, amplifier and other components from the effects of high-frequency energy, such as co-channel interference.
Working Principle
The Zener diode\'s working principle pans out by taking advantage of the special properties of the PN junction. When a bias voltage is applied across the junction, electrons are pushed to the n-side while holes are pushed to the p-side. This process creates an electric field that attracts opposite particles and repels like particles. In the BZX84C6V8-G3-08, this field of repulsion reaches a critical point called the breakdown voltage, at which the Zener diode will allow current to flow despite the applied voltage being less than the diode\'s rated current. When the voltage reaches the diode\'s breakdown voltage, the diode produces a \'breakdown current\', allowing current to flow continuously and protecting the circuit components and boards from overvoltage.
All in all, the BZX84C6V8-G3-08 is a single Zener diode, designed for digital circuit applications such as overvoltage protection and high-frequency low-level applications. Its working principle relies on the breaking down of electrons and holes due to the electric field, which in turn produces a break down current that can protect circuits from overvoltage. This diode can be widely applied in motor control circuits, radio-frequency circuits, and other circuits that require overvoltage protection and low-level clipping.
The specific data is subject to PDF, and the above content is for reference
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| BZX85C5V6 A0G | Taiwan Semic... | 0.02 $ | 1000 | DIODE ZENER 5.6V 1.3W DO2... |
| BZX84C8V2-HE3-08 | Vishay Semic... | 0.02 $ | 1000 | DIODE ZENER 8.2V 300MW SO... |
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| BZX85C3V6 A0G | Taiwan Semic... | 0.02 $ | 1000 | DIODE ZENER 3.6V 1.3W DO2... |
| BZX84B3V6-HE3-08 | Vishay Semic... | 0.02 $ | 1000 | DIODE ZENER 3.6V 300MW SO... |
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BZX84C6V8-G3-08 Datasheet/PDF