CAS300M17BM2

Series:	Z-Rec®
Packaging:	Tray
Part Status:	Active
FET Type:	2 N-Channel (Half Bridge)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C:	325A
Rds On (Max) @ Id, Vgs:	10 mOhm @ 225A, 20V
Vgs(th) (Max) @ Id:	2.3V @ 15mA (Typ)
Gate Charge (Qg) (Max) @ Vgs:	1076nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds:	20000pF @ 1000V
Power - Max:	1760W
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

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CAS300M17BM2 is a FET device for high-frequency applications. It consists of four parallel-connected MOSFETs that are grouped into two arrays of two. The FETs are normally operated in parallel and offer excellent power efficiency, low power loss, and high frequency performance. The FETs can also be arranged in series for increased current drive and attenuation.The FETs of the CAS300M17BM2 are developed and optimized for high-power applications in the frequency range of 75MHz to 500MHz. The device is designed to operate at a maximum drain-source voltage of 17V and a maximum current of 3A. It features a low on-resistance of 0.24Ω.The CAS300M17BM2 features a proprietary silicon technology that ensures a high gain of linearity and low thermal resistance. The device also offers a low noise figure and a high frequency response with a high level of linearity, making it suitable for wireless communication, radar, and other high-frequency applications.The CAS300M17BM2 is housed in a small package with an operating temperature range of −55°C to +175°C. Its low parasitic capacitance makes it well suited for high frequency applications. The device is RoHS compliant and can be used in a variety of environments.The working principle of the CAS300M17BM2 is based on the operation of the four MOSFETs, which are connected in parallel. This design allows for the device to operate with a low drain-source voltage (max 17V) and a maximum current of 3A. The low on-resistance of the FETs ensures efficient transfer of the gate drive with excellent power efficiency and low power loss.The MOSFETs of the CAS300M17BM2 provide a high level of linearity in the operating frequency range of 75MHz to 500MHz. Additionally, the MOSFETs offer a low noise figure and a high frequency response with a high level of linearity. The FET device is designed to ensure a high gain of linearity and low thermal resistance.The CAS300M17BM2 is designed for use in various high-power applications, including wireless communication, radar, and more. Its small size and low parasitic capacitance make it ideal for such applications. The device is also RoHS compliant, providing it with a broad range of uses as well.In conclusion, the CAS300M17BM2 is an excellent FET device for high-frequency applications. It consists of four parallel-connected MOSFETs that offer low on-resistance and excellent power efficiency. Additionally, the MOSFETs offer a high gain of linearity and low thermal resistance. The device is suitable for wireless communication, radar, and other high-frequency applications. The CAS300M17BM2 is also RoHS compliant and can be used in a variety of environments.

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