Allicdata Part #: | CCS020M12CM2-ND |
Manufacturer Part#: |
CCS020M12CM2 |
Price: | $ 137.21 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Cree/Wolfspeed |
Short Description: | MOSFET 6N-CH 1200V 29.5A MODULE |
More Detail: | Mosfet Array 6 N-Channel (3-Phase Bridge) 1200V (1... |
DataSheet: | CCS020M12CM2 Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 124.74000 |
Series: | Z-Rec® |
Packaging: | Tray |
Part Status: | Active |
FET Type: | 6 N-Channel (3-Phase Bridge) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: | 29.5A |
Rds On (Max) @ Id, Vgs: | 98 mOhm @ 20A, 20V |
Vgs(th) (Max) @ Id: | 2.2V @ 1mA (Typ) |
Gate Charge (Qg) (Max) @ Vgs: | 61.5nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds: | 900pF @ 800V |
Power - Max: | 167W |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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The CCS020M12CM2 is a transistor array specifically designed for use in applications that require a high level of efficiency and low current draw. It is designed to offer maximum portability, reliability and affordability in its class. This transistor array is comprised of four N-channel MOSFETs in a single package with lead-to-lead connections. This transistor array is well suited for use in applications such as switching power supplies, motor control, driver applications, and instrumentation.
The CCS020M12CM2 is a high-performance device suitable for many applications. It is designed to handle large currents and its drain-source peak reverse blocking voltage rating is up to 40 V. It has low on-state resistance, low leakage, and fast switching times. It also exhibits good speed versus voltage and temperature performance. With its ability to handle high currents, the CCS020M12CM2 transistor array can be used in battery-powered equipment requiring compact, low-current operations.
The working principle of the CCS020M12CM2 involves the use of a MOSFET transistor. This type of transistor is a voltage controlled device, which means that its operation is determined by the voltage applied to its gate terminal. When the gate voltage is high, the transistor is turned on and the current flows through it. When the gate voltage is low, the transistor is turned off, and the current does not flow through it. This type of transistor is also known as a Field Effect Transistor (FET).
In the CCS020M12CM2 transistor array, four N-channel MOSFETs are connected in a common-drain configuration. This allows the current to be routed from one device to another, allowing the array to act like a single transistor. The gate terminals are connected to a single driver, so that the same gate voltage is applied to each device and the array acts as a single device. The common-drain configuration also provides the advantage of allowing each device to function as both an amplifier and a switch. As such, this type of transistor array can be used in high-speed applications.
The CCS020M12CM2 transistor array can be used in a variety of applications, provided that its peak blocking voltage rating of 40 V is not exceeded. These applications include voltage regulation, high-speed switching, driver applications, switching power supplies, and motor control. In each of these applications, the CCS020M12CM2 transistor array is designed to offer high levels of efficiency and low current draw.
The specific data is subject to PDF, and the above content is for reference
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