CD214B-T43ALF

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Transient Voltage Suppression (TVS) diodes are a type of diode used to protect sensitive electronic components from damage due to surges, supply rail transients, ground bounce, and other electrical transients. The CD214B-T43ALF is a planar-style, unidirectional TVS diode designed to provide electrostatic discharge (ESD) protection and transient voltage suppressor (TVS) protection on USB3.0 and USB 3.1 ports.

The CD214B-T43ALF is designed for a wide variety of applications, including high-speed digital boards, memory protection, interface boards, and power supplies. It can provide surge protection up to a maximum of five kilovolts (5kV) of electrostatic discharge protection. The device also meets the IEC61000-4-2 international standard for ESD protection. The TVS diode reduces voltage transients on sensitive electronic components by creating a ground path and providing an alternate low-impedance path for any current surges.

The device features a PN junction guard structure with a tightly coupled shield electrode that creates an additional guard path to prevent any ESD induced damage. The PN junction guard structure also limits the voltage across the diode by restricting the current into the diode. In addition, the CD214B-T43ALF includes a built-in thermal protection circuitry to prevent the device from overheating.

The working principle behind the CD214B-T43ALF is based on the fact that when an ESD pulse is applied, the junction guard structure limits the current into the diode and creates a ground path that limits the voltage across the diode. When a transient voltage is applied, the diode creates a low-impedance path that bypasses the device and limits the voltage across the device. The thermal protection circuitry also prevents the device from overheating due to prolonged, high-current pulses by shutting down the device if the internal temperature exceeds the rated temperature.

In summary, the CD214B-T43ALF is an ideal solution for protecting sensitive Electronic components from ESD and transient voltage events, providing up to 5kV of ESD protection and an additional thermal protection layer. The device’s PN junction guard structure and thermal protection circuitry make it well suited for a variety of applications, and its low-impedance path helps reduce voltage transients.

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