CD74HC30MT

Current - Output High, Low:	5.2mA, 5.2mA
Base Part Number:	74HC30
Package / Case:	14-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	14-SOIC
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 125°C
Max Propagation Delay @ V, Max CL:	22ns @ 6V, 50pF
Logic Level - High:	1.5 V ~ 4.2 V
Logic Level - Low:	0.5 V ~ 1.8 V
Series:	74HC
Current - Quiescent (Max):	2µA
Voltage - Supply:	2 V ~ 6 V
Features:	--
Number of Inputs:	8
Number of Circuits:	1
Logic Type:	NAND Gate
Part Status:	Active
Packaging:	Tape & Reel (TR)

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CD74HC30MT is a field-effect transistor (FET) designed for radio frequency (RF) applications. It is a high speed transistor with low noise figure, low distortion, and wide dynamic range. The working principle of this transistor is mainly based on field effect mobility of current carriers. The CD74HC30MT is a high speed, low-power, four-input NAND logic gate which is commonly used in digital logic circuits. It is a CMOS (Complementary Metal-Oxide Semiconductor) logic family and is capable of operating at voltages as low as 2.0V. This NAND gate is composed of three input NAND circuits, an output buffer and an enable input.A NAND (or NOT AND) gate is a type of logic gate which will output a high (1) logical state if any of its inputs is low (0), and will output a low (0) logical state only if all its inputs are high. The same logic is used on the CD74HC30MT, but with improved high-speed characteristics.The main application field of CD74HC30MT is for driving as inverters for logic high or low signals in digital logic. This can be used to drive other digital components or as an input to other components that accept logical high or low signals. It can also be used as an input buffer or output driver in digital demanding applications such as image processing, digital audio, etc.The operation of this transistor is based on its field effect mobility of current carriers. In a field effect transistor, a movable charge carrier (electron or hole) is used to control the electron flow. When the voltage is applied to the gate terminal, it will create an electric field which will be strong enough to make the additional carriers move around the body region of the transistor causing the current flow.The CD74HC30MT works in the same way but with improved high-speed characteristics. It has low distortion linear output characteristics, low gate capacitance, and low switching noise. It is also capable of driving multiple loads with higher current and the performance remains unaffected by manufacturing variations due to its CMOS logic family.In conclusion, CD74HC30MT is a high-performance field-effect transistor for RF applications. It is a CMOS logic NAND gate with improved high speed characteristics. It can be used for driving as inverters for logic high or low signals and as an input buffer or output driver for digital demanding applications. The working principle of CD74HC30MT is based on field effect mobility of current carriers.

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