CDBJSC8650-G Allicdata Electronics
Allicdata Part #:

CDBJSC8650-G-ND

Manufacturer Part#:

CDBJSC8650-G

Price: $ 1.27
Product Category:

Discrete Semiconductor Products

Manufacturer: Comchip Technology
Short Description: DIODE SILICON CARBIDE POWER SCHO
More Detail: Diode Silicon Carbide Schottky 650V 8A (DC) Throug...
DataSheet: CDBJSC8650-G datasheetCDBJSC8650-G Datasheet/PDF
Quantity: 1000
1000 +: $ 1.13910
Stock 1000Can Ship Immediately
$ 1.27
Specifications
Series: --
Part Status: Active
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 8A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 100µA @ 650V
Capacitance @ Vr, F: 560pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Description

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Diodes - Rectifiers - Single

A single diode rectifier, such as the CDBJSC8650-G, is an electronic device that has a single p-n junction separating two electrodes. It has a single p-type semiconductor layer connected to the (positive) anode and a single n-type semiconductor layer connected to the (negative) cathode. When a voltage is applied across the terminals of the diode, current will flow in one direction.

The CDBJSC8650-G is designed for use in a variety of applications ranging from power conversion and rectification to signal conditioning and protection. It is particularly well-suited for applications that require high precision, reliability, and low power consumption. Its power factor correction capability ensures greater efficiency and its high temperature coefficient ensures stability over a wide range of temperatures.

The working principle of the CDBJSC8650-G is based on the concept of charge carriers - electrons and holes - flowing through the p-n junction. When the diode is forward biased (i.e., the voltage applied is positive with respect to the anode), the p-type region of the diode becomes positive with respect to the n-type region. This causes electrons to be attracted to the positive terminal, while holes are attracted to the negative terminal. At the same time, the depletion region (which is an isolated region of charge) in between the two regions increases.

When an alternating current (AC) is applied to the CDBJSC8650-G, the diode passes the positive half cycles but blocks the negative half cycles. This rectification process converts the AC into a pulsed Direct Current (DC), which can then be filtered to collapse the pulsations and provide a smooth DC output.The CDBJSC8650-G also features high frequency capability, which makes it suitable for use in high frequency switching applications as well.

The CDBJSC8650-G is a robust and reliable single diode rectifier designed for use in a variety of applications. Its power factor correction capability ensures greater efficiency, while its high temperature coefficient ensures stability over a wide range of temperatures. It is particularly well-suited for applications requiring precision, reliability, and low power consumption.

The specific data is subject to PDF, and the above content is for reference

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