CDBQR0130R

Diodes - Rectifiers - Single: CDBQR0130R Application Field and Working Principle

CDBQR0130R is a high-power Schottky rectifier diode with a low barrier height. It is primarily used in applications where there is a need for high-power and high-speed performance. This type of diode is ideal for power factor correction, powerline protection, and surge protection in AC/DC converters as well as in high-efficiency switching applications.

The CDBQR0130R is composed of an ultra-thin P + collector region and an n + guard-ring. This provides a low forward voltage drop, making it well suited for use in high voltage applications. Additionally, the device offers a low thermal resistance and excellent capacitance characteristics, making it an ideal choice for power factor correction applications.

In terms of its working principle, the CDBQR0130R acts like a conventional Schottky rectifier, where the p-doped collector region provides a low forward voltage drop under forward bias conditions. As the device is forward biased, current begins to flow through it. When the forward voltage exceeds the breakdown voltage of the device, it is said to be conducting. Once the device is in a conducting state, a reverse current begins to flow. This current is limited by the reverse conductivity of the device, which is determined by the barrier height.

The CDBQR0130R offers a number of advantages over conventional rectifier diodes. It has a much lower forward voltage drop, enabling higher efficiency in power conversion. Additionally, it has a much lower reverse leakage current, which improves the performance of power factor correction circuits. Finally, its high switching speed makes it ideal for applications where high-speed performance is required such as high-efficiency Class-D amplifiers.

In conclusion, CDBQR0130R is an ultra-thin Schottky rectifier diode with a low barrier height. This makes it well suited for applications requiring high power and high-speed performance such as power factor correction, powerline protection, and surge protection. It provides a low forward voltage drop, a low thermal resistance, and excellent capacitance characteristics, making it an ideal choice for power factor correction applications. Furthermore, its high switching speed makes it ideal for applications requiring high-speed performance.